High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

Stellmach, Joachim; Pristovsek, Markus; Savaş, Özgür; Schlegel, Jessica; Yakovlev, E.V.; Kneissl, Michael

doi:10.1016/j.jcrysgro.2010.06.036

Cited by 28 publications

(22 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The growth rate decreases exponentially from 1:3 mm=h at 150 hPa to 0:3 mm=h at 300 hPa with increasing reactor pressure for a V/III ratio of 1043 (Table 1). This is similar to c-plane AlN and can be explained by gas phase particle formation [14].…”

Section: Resultssupporting

confidence: 65%

MOVPE growth of semipolar (112¯2) AlN on m-plane (10<

Stellmach

Frentrup

Mehnke

et al. 2012

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 65%

MOVPE growth of semipolar (112¯2) AlN on m-plane (10<

Stellmach

Frentrup

Mehnke

et al. 2012

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…The ratio dependences of growth rate and Al content at low-pressure show almost linear characteristics, which means that, in this case, the polymer formation would be suppressed. Previous work also reported a linear dependence of growth rate and Al content on the TMAl/(TMAl+TMGa) ratio experimentally and numerically only at low pressure [48]. At a higher pressure of 40 kPa, the ratio dependence became non-linear.…”

Section: Figure 18mentioning

confidence: 84%

Simulation of Nitride Semiconductor MOVPE

Ohkawa

2020

Digital Encyclopedia of Applied Physics

View full text Add to dashboard Cite

This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.

show abstract

“…Hence, the consumption of gallium by the particles is no longer limited by methyl desorption. The uptake of gallium becomes intensive and alters the predicted growth rate [11].…”

Section: Resultsmentioning

confidence: 99%

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Tao

Liang

Xia

et al. 2014

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomic force microscopy, X-ray diffraction, low-temperature (10 K) photoluminescence and the Raman scattering. It is found that, as the spacing between showerhead and susceptor decreased, the growth rate increased and the tensile stress decreased. This result may be useful to control the stress in GaN thin films grown on silicon carbide substrate by MOCVD.

show abstract

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

Cited by 28 publications

References 10 publications

MOVPE growth of semipolar (112¯2) AlN on m-plane (10<

MOVPE growth of semipolar (112¯2) AlN on m-plane (10<

Simulation of Nitride Semiconductor MOVPE

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Contact Info

Product

Resources

About