Hierarchical Device Simulation

Abstract

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High Performance, Strained-Ge, Heterostructure p-MOSFETs

“…In order to accurately estimate the transport in highly scaled MOSFETs, Full-Band MonteCarlo simulations need to be performed [10]. As shown in Fig.…”

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

“…Such connections are invaluable for enhancing physical understanding, and they can sometimes be quantitative and especially useful for projecting the performance of semiconductors that have not yet been grown of device quality [16]. Given the limited length of this review, our discussion of the microscopic viewpoint will be confined to the crucial DG equation of state (2.3.6).…”

“…That there is good agreement in accumulation (i.e., negative bias) where the capacitance is most influenced by the quantum effects shows that the discrepancies in the DGC curve come not from flaws in the quantum representation but rather from other inadequacies such as in describing generation/recombination. 16 To this point we have discussed confinement problems in which the barriers are well approximated as being infinitely high. But of course this is an idealization and in many practical semiconductor device situations the finiteness of the barrier height plays an important role.…”

“…In a 15 Another complication was that the substrate had an inhomogeneous doping profile that had to be carefully profiled using SIMS and included in the simulations. 16 Threshold voltages are hard to predict with any theory, and so the matching of theoretical and experimental threshold voltages in Fig. 3.2.8 was achieved by curve-fitting.…”

“…As noted in the previous paragraph, this variation in r n is not a proof that we are now beyond the capabilities of any DG-based field theory. But the observed direct dependence of r n on the size of the "box" the electron gas resides in shows that this is a non-local effect and thus is an improper extension of linear DGC field theory as 17 Some discussion of a possible physical basis appeared in the last reference in [16].…”