2017
DOI: 10.1016/j.apcatb.2016.07.021
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Hierarchical assembly of graphene-bridged Ag3PO4/Ag/BiVO4 (040) Z-scheme photocatalyst: An efficient, sustainable and heterogeneous catalyst with enhanced visible-light photoactivity towards tetracycline degradation under visible light irradiation

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Cited by 766 publications
(196 citation statements)
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“…The Ag 3d 5/2 and 3d 3/2 of Ag 3 PO 4 were located at 367.8 and 373.8 eV, which are consistent with the value of Ag + in the Ag 3 PO 4 [43]. The P 2p has a peak at 132.4 eV, corresponding to P 5+ in the Ag 3 PO 4 [15].…”
Section: Structure and Composition Of Ag3po4/g-c3n4 Photocatalystssupporting
confidence: 67%
See 1 more Smart Citation
“…The Ag 3d 5/2 and 3d 3/2 of Ag 3 PO 4 were located at 367.8 and 373.8 eV, which are consistent with the value of Ag + in the Ag 3 PO 4 [43]. The P 2p has a peak at 132.4 eV, corresponding to P 5+ in the Ag 3 PO 4 [15].…”
Section: Structure and Composition Of Ag3po4/g-c3n4 Photocatalystssupporting
confidence: 67%
“…located at 367.8 and 373.8 eV, which are consistent with the value of Ag + in the Ag3PO4 [43]. The P 2p has a peak at 132.4 eV, corresponding to P 5+ in the Ag3PO4 [15]. The optical properties of the prepared photocatalysts were measured via UV-vis DRS.…”
Section: Structure and Composition Of Ag3po4/g-c3n4 Photocatalystssupporting
confidence: 53%
“…10) To explore the underlying photocatalytic mechanism, RhB degradation was conducted under visible light irradiation [39], adding a hole (h + ) scavenger (ammonium oxalate ((NH 4 ) 2 C 2 O 4 )), a superoxide radical (•O 2− ) scavenger (1.4-benzoquinone, BQ) [40], or hydroxyl radical (•OH) scavengers (tert-Butanol, t-BuOH) [41]. Following the addition of BQ, no obvious decrease was observed, but an acceleration in the degradation rate was detected compared to that of Ag/BiV 0.9925-Mo 0.0075 O 4 (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Fortunately, some previous studies have proved that introducing electron mediators (including Au [21][22][23] , Ag [16,24,25] , reduced graphene oxide [26] and so on) at the interface between PS Ⅰ and PS Ⅱ could reduce the transmission impedance of electrons and improve electron transfer rate across the interface, in which electron mediators act as a transfer channel for carriers. Regrettably, because free electron and hole are photo-excited simultaneously at the surface of PS Ⅰ or PS Ⅱ, and the isotropic migration of photo-induced electron-hole pairs from the bulk to surface of each semiconductor, opposite charge carriers can accumulate inevitably in the surface and its density will gradually increase, inducing serious surface self-recombination [20] .…”
Section: Introductionmentioning
confidence: 98%