2015
DOI: 10.3390/ma8031124
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Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

Abstract: Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an approp… Show more

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Cited by 67 publications
(42 citation statements)
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References 132 publications
(314 reference statements)
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“…1, a relative high ZT requires a high S 2 σ and/or a low κ [11,12]. So far, significant progress has been made in enhancing ZT through increasing S 2 σ by resonant state doping [13][14][15][16], minority carrier blocking [17][18][19][20], band convergence [21][22][23][24], quantum confinement [25][26][27][28]; and/or reducing κ by nanostructuring [29][30][31][32], hierarchical architecturing [6,[33][34][35], and matrix with nanoprecipitates [36][37][38][39]. In general, one thermoelectric component contains an n-type and a p-type thermoelectric material, so that the developments of both n-type and p-type high-performance thermoelectric materials are necessary for the practical use of thermoelectric devices [40,41].…”
Section: Introductionmentioning
confidence: 99%
“…1, a relative high ZT requires a high S 2 σ and/or a low κ [11,12]. So far, significant progress has been made in enhancing ZT through increasing S 2 σ by resonant state doping [13][14][15][16], minority carrier blocking [17][18][19][20], band convergence [21][22][23][24], quantum confinement [25][26][27][28]; and/or reducing κ by nanostructuring [29][30][31][32], hierarchical architecturing [6,[33][34][35], and matrix with nanoprecipitates [36][37][38][39]. In general, one thermoelectric component contains an n-type and a p-type thermoelectric material, so that the developments of both n-type and p-type high-performance thermoelectric materials are necessary for the practical use of thermoelectric devices [40,41].…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14] To date, many researchers have investigated TE properties of various kinds of materials based on Cu-S, as will be mentioned below. The TE properties have been reviewed on the sulfides, 15,16 binary sulfides, 17 Cu-based materials, 18 and tetrahedrites, 19 respectively. This review, on the other hand, aims at highlighting common/unique aspects of various Cu-S based synthetic minerals and related systems with potential for TE applications.…”
Section: Introductionmentioning
confidence: 99%
“…Apart from being main composition and dopants, the misfit layer compounds are one significant variety of the RECs of low dimension, which have drawn considerable interest and been applied in the research of thermoelectricity. The misfit layer compounds containing RE can be denoted by a general formula [(REX) 1 + m ] x [TX 2 ] y (T = Ti, V, Cr, Nb, and Ta; X = S and Se; m = 0.08‐0.28; x = 1, 1.5, and 2; y = 1, 2, 3, and 4) . The family of these compounds with an incommensurate layer structure is large.…”
Section: Materials Classification and Synthesismentioning
confidence: 99%