HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays

Reine, M. B.; Marciniec, J.; Wong, K. K.; Parodos, T.; Mullarkey, J.D.; Lamarre, P.; Tobin, S. P.; Gustavsen, K.A.; Williams, G. M.

doi:10.1117/12.692872

Cited by 15 publications

(8 citation statements)

References 17 publications

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“…6. Figure 4 shows the response of the HgCdTe and the SLS diodes under reverse-bias conditions with and without the optical illumination along with the respective multiplication gains.…”

Section: Resultsmentioning

confidence: 98%

“…Due to its fundamental electronic band structure 3 and low electron-to-hole mass ratio ($1/100), HgCdTe has emerged as the material of choice for the fabrication of low-noise MWIR APDs. [4][5][6][7][8] So far, vertical and lateral APD devices grown by epitaxy on CdZnTe substrates have demonstrated high gain and low noise characteristics. The APD reported by Beck et al 4 showed noiseless multiplication gain of 1270 at -13.1 V and 77 K and that of Reine et al 6 had a multiplication gain of 686 at a reverse bias of -11.7 V in the MWIR region.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6][7][8] So far, vertical and lateral APD devices grown by epitaxy on CdZnTe substrates have demonstrated high gain and low noise characteristics. The APD reported by Beck et al 4 showed noiseless multiplication gain of 1270 at -13.1 V and 77 K and that of Reine et al 6 had a multiplication gain of 686 at a reverse bias of -11.7 V in the MWIR region. The group from CEA-LETI has reported 7,8 a multiplication gain of 5300 at a reverse bias of -12.5 V for a structure grown epitaxially on CdZnTe substrates.…”

Section: Introductionmentioning

confidence: 99%

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Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Ghosh

Mallick

Banerjee

et al. 2008

Journal of Elec Materi

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Mid-wavelength infrared (MWIR) p + -n --n + avalanche photodiodes (APDs) were fabricated using two materials systems, one with mercury cadmium telluride (HgCdTe) on a silicon (Si) substrate and the other with an indium arsenide/gallium antimonide (InAs/GaSb) strained layer superlattice (SLS). Diode characteristics, avalanche characteristics, and excess noise factors were measured for both sets of devices. Maximum zero-bias resistance times active area (R 0 A) of 3 9 10 6 X cm 2 and 1.1 9 10 6 X cm 2 and maximum multiplication gains of 1250 at -10 V and 1800 at -20 V were measured for the HgCdTe and the SLS, respectively, at 77 K. Gains reduce to 200 in either case at 120 K. Excess noise factors were almost constant with increasing gain and were measured in the range of 1 to 1.2.

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“…6. Figure 4 shows the response of the HgCdTe and the SLS diodes under reverse-bias conditions with and without the optical illumination along with the respective multiplication gains.…”

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Ghosh

Mallick

Banerjee

et al. 2008

Journal of Elec Materi

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“…Similar results were reported for MWIR HgCdTe e-APDs. [2][3][4][5][6][7][8][9] Unfortunately, excess noise measurements in LWIR e-APDs are currently limited to low gains, due to the rapid increase in tunneling currents.…”

Section: Excess Noise Factormentioning

confidence: 99%

“…The reported research on HgCdTe APDs has, so far, been focused on telecom wavelength, [11][12][13][14] SWIR and MWIR [2][3][4][5][6][7][8][9] APDs. Impact ionization in LWIR photodiodes was first studied by Elliott et al 10 in 1990 and then by Beck et al 3 and Vaidyanathan et al 4 …”

Section: Introductionmentioning

confidence: 99%

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes

Derelle

Bernhardt

Haïdar

et al. 2009

Journal of Elec Materi

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We evaluated the performance of long-wavelength infrared (LWIR, k c = 9.0 lm at 80 K) mercury cadmium telluride electron-injected avalanche photodiodes (e-APDs) in terms of gain, excess noise factor, and dark current, and also spectral and spatial response at zero bias. We found an exponential gain curve up to 23 at 100 K and a low excess noise factor close to unity (F = 1-1.25). These properties are indicative of a single carrier multiplication process, which is electron impact ionization. The dark current is prevailed by a diffusion current at low reverse bias. However, tunneling currents at higher reverse bias limited the usable gain. The measurements of the pixel spatial response showed that the collection width, and, especially, the amplitude of the response peak, increased with temperature. Furthermore, we developed a Monte Carlo model to understand the multiplication process in HgCdTe APDs. The first simulation results corroborated experimental measurements of gain and excess noise factor in mid-wavelength infrared (MWIR, x = 0.3) and LWIR (x = 0.235) e-APDs at 80 K. This model makes it possible for phenomenological studies to be performed to identify the main physical effects and technological parameters that influence the gain and excess noise. The study of the effect of the n À -layer thickness on APD performance demonstrated the existence of an optimum value in terms of gain.

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Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes

2020

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Semiconductor avalanche photodiodes enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times. The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of research aimed at investigation of the impact ionization mechanism in HgCdTe photodiodes operating at 230 K and in the medium-wave infrared range. Numerical analyses were used for the study using a computer program in which the modeling and consideration of all the possible generation and recombination mechanisms were included.

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HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays

Cited by 15 publications

References 17 publications

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes

Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes

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