HgCdTe avalanche photodiodes: A review

Singh, Anand; Srivastav, Vanya; Pal, R.

doi:10.1016/j.optlastec.2011.03.009

Cited by 53 publications

(27 citation statements)

References 80 publications

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“…In addition to these currents, band to band tunneling current arises due to the electrons from the valence band to the conduction band at high reverse bias 20,25,26 …”

Section: Resultsmentioning

confidence: 99%

“…High gain with ultra low excess noise factor has been reported in MWIR HgCdTe e-APDs by several groups. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Results on design, fabrication and characterization of e-APD detector arrays using LPE grown p-HgCdTe epilayers are presented in this paper. Consideration of active cum passive modes of operation has been kept in mind in the development of these detector arrays.…”

Section: Introductionmentioning

confidence: 99%

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HgCdTe e-avalanche photodiode detector arrays

2015

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Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

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“…In addition to these currents, band to band tunneling current arises due to the electrons from the valence band to the conduction band at high reverse bias 20,25,26 …”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

HgCdTe e-avalanche photodiode detector arrays

2015

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“…We can remark the important J BTB dark current at reverse bias equal to -2V, limiting the potential gain of such diode design. Extracted from theses curves, gain values were calculated using the following equation 1 Fig. 6b show that the absorber doping level has a small influence on the gain value.…”

Section: Design Optimizationmentioning

confidence: 99%

“…In particular, for scene with very low flux of infrared photons, high speed and sensitive infrared avalanche photodiodes (APDs) are required, motivating important research activities 1 . In the MWIR spectral range (2-5µm), best performances were obtained by HgCdTe e-APDs with a gain record value higher than 5000 at V= -12.5V without additional noise 2 .…”

Section: Introductionmentioning

confidence: 99%

Design, fabrication, and characterization of InSb avalanche photodiode

et al. 2013

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In this communication, the potentiality of InSb material as an avalanche photodiode (APD) device is investigated. Current density-voltage (J-V) characteristics at 77K of InSb pin photodiodes were simulated by using ATLAS software from SILVACO, in dark conditions and under illumination. In order to validate parameter values used for the modeling, theoretical J-V results were compared with experimental measurements performed on InSb diodes fabricated by molecular beam epitaxy. Next, assuming a multiplication process only induced by the electrons (e-APD), different designs of separate absorption and multiplication (SAM) APD structure were theoretically investigated and the first InSb SAM APD structure with 1µm thick multiplication layer was then fabricated and characterized.

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“…High gain with low noise and wide bandwidth are vital for imaging applications. Avalanche photodiodes perform the functions of detection and amplification for the attenuated optical signals in the battle field and long range applications, especially in space based thermal imaging applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14] . APD provides high internal gain and fast response time, which are needed to meet the system requirements.…”

Section: Introductionmentioning

confidence: 99%

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

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HgCdTe avalanche photodiodes: A review

Cited by 53 publications

References 80 publications

HgCdTe e-avalanche photodiode detector arrays

HgCdTe e-avalanche photodiode detector arrays

Design, fabrication, and characterization of InSb avalanche photodiode

Infrared Avalanche Photodiode Detectors

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