HfSe ₂ and ZrSe ₂ : Two-dimensional semiconductors with native high-κ oxides

Abstract

Atomically thin two-dimensional semiconductors feature silicon-like band gaps and native high-κ metal oxides.

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

“…We overcome these issues by utilizing a surface oxidation layer (OL) in 2D semiconductors as an effective tunneling barrier. In the in-plane direction, a natively grown OL can yield a high compatibility between the oxide and layered semiconductor, 22,23 enabling a large-scale and atomically smooth oxide functioned as a tunneling contact in 2D semiconductor devices. In the out-of-plane direction, because of the nature of van der Waals crystals, the thickness of the oxide layer can be precisely controlled down to atomicscale resolution, facilitating a high tunability of tunneling efficiency.…”

Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

“…The back‐gated FETs of exfoliated multilayer HfSe 2 with a high on/off current ratio of >7.5 × 10 6 on SiO 2 /Si substrate were initially fabricated; nevertheless, the extraced carrier mobilities are lower than 1 cm 2 (V s) −1 . Then the top‐gated multilayer HfSe 2 FETs with high κ dielectrics grown by atomic layer deposition were demonstrated this year, but the multilayer HfSe 2 was still obtained by mechanical exfoliation and the carrier mobilities of devices were only enhanced to ≈4 cm 2 (V s) −1 . Moreover, the phototransistors utilizing exfoliated few‐layered HfSe 2 as the channel material were performed by Yin et al The molecular beam epitaxy (MBE) systems were also employed for the growth of TMDs including HfSe 2 certainly .…”

Honeycomb‐Patterned Polyimide Film as a Versatile Coating for High‐Performance Dielectric Material

“…Controlling the dielectric properties of materials for use in electronics has attracted considerable attention from both academic and industrial perspectives. [1][2][3][4][5] Low-dielectric-constant materials are of particulari nterest because of their wide use in integrated circuits to reduce electronic signal interference, power dissipation, propagation delay,a nd so on. [6][7][8][9][10] Polyimide (PI) has been generally regarded as one of the candidates with the most potential in this regardo wing to its good chemical and thermals tability alongw ith its noteworthy dielectric and mechanical properties.…”

“…[6][7][8][9][10] Polyimide (PI) has been generally regarded as one of the candidates with the most potential in this regardo wing to its good chemical and thermals tability alongw ith its noteworthy dielectric and mechanical properties. [11][12][13][14][15] However,i ts wider application in the rapidly developing field of microelectronics hasb een restricted because the dielectric constant (3)(4) and water absorption( 2-4 %) of commerciallya vailable PI film are not low enough. [16] It is therefore of particulari mportance to develop new methods to decrease its dielectric constant and water absorption.…”