HfO₂high-ksolid-state incandescent devices: performance improvement using a Ti-embedded layer and observation of conductive paths as light-emitting sources

Abstract

Solid-state incandescent light-emission devices (SSI-LEDs) with a metal-oxide-semiconductor structure are promising candidates for future broadband light-emission devices. In this work, the electrical and light-emission features of SSI-LEDs based on HfO high-k thin films with or without the Ti-embedded layer on p-type silicon wafers have been studied. It turns out that the Ti-embedded layer can effectively reduce the turn-on voltage, thus improving the fluorescence efficiency of SSI-LEDs. The combination of scanning electron microscopy, atomic force microscope (AFM) and conductive AFM results unambiguously clarifies that conductive filaments, which are formed due to local thermal excitation during the forming process, are accompanied by the formation of pits on the HfO surface and are responsible for the light emission. This work develops an effective approach to improving the luminescence performance of SSI-LEDs and experimentally explains the light-emitting mechanism of such devices, which is of great importance to eventually realizng broadband light-emitting devices with low power consumption.

Si Wafer Dopant Concentration Effect on Light Emission of Solid State Incandescent Light Emitting Devices

“…For example, nanocrystalline ZnO, CdSe and Ti have been embedded in the high-k gate dielectric film to enhance the formation of nano-resistors in the dielectric breakdown process, which increased the intensity of the emitted light. 1,7,8 The HfO x /ZnO/HfO x multilayer structure has been used to replace the single-layer HfO x gate dielectric to improve the light emission intensity. 9 In addition, WO 2 and TiO 2 have been used to replace the HfO x gate dielectric film to enhance the light emitting efficiency.…”