Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Wang, Bo; Yu, Li; Zheng, Jiaxin; Xu, Ming; Liu, Fusheng; Ao, W.Q.; Li, Junqing; Pan, Feng

doi:10.1038/srep09365

Cited by 7 publications

(5 citation statements)

References 41 publications

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“…The increase in carrier mobility along with increasing carrier concentration upon foreign element doping is also observed in similar compounds. [41,42] In addition, carrier mobility values in this study are low but are consistent with the previous reports. [32,33] Furthermore, carrier concentration was also calculated using simple valence electron counting assuming only doping amount of In contributes to the carrier concentration and Cu 2 MnSnSe 4 was considered as charge balanced, as shown in Table 1.…”

Section: Resultssupporting

confidence: 92%

Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

Mehmood

Sun

et al. 2022

Physica Rapid Research Ltrs

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Recently, Cu2MnSnSe4 alloys and similar compounds have drawn immense attention due to their low intrinsic thermal conductivity. However, their inferior electrical properties hinder their industrial applications. Herein, Cu2MnSn1−xInxSe4 alloys are successfully synthesized and the thermoelectric transport properties are investigated. The results reveal that In doping significantly enhances the electrical properties by reducing electrical resistivity by 4.3 times at maximum temperature. As a consequence, the power factor value is enhanced to 665 μW K−2 m−1 for the sample with 7.5% In concentration which is about 2.2 times higher than the pristine sample. Eventually improved dimensionless figure of merit of 0.33 has been obtained for 5% sample.

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Section: Resultssupporting

confidence: 92%

Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

Mehmood

Sun

et al. 2022

Physica Rapid Research Ltrs

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“…The Cu 3d-chalcogen p hybridised bond forming the VBM is universal in Cu-based diamond-like compounds and similar conductive networks have been revealed by calculations for other diamond-like compounds. 73,74 The above studies reveal some general qualitative features of conductive networks in TE materials. At the Fermi level, atoms on the conductive network form a clear bonding channel in real space, with out-of-network atoms being nearly isolated.…”

Section: Manipulation Of Carrier Scatteringmentioning

confidence: 78%

On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective

et al. 2016

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During the last two decades, we have witnessed great progress in research on thermoelectrics. There are two primary focuses. One is the fundamental understanding of electrical and thermal transport, enabled by the interplay of theory and experiment; the other is the substantial enhancement of the performance of various thermoelectric materials, through synergistic optimisation of those intercorrelated transport parameters. Here we review some of the successful strategies for tuning electrical and thermal transport. For electrical transport, we start from the classical but still very active strategy of tuning band degeneracy (or band convergence), then discuss the engineering of carrier scattering, and finally address the concept of conduction channels and conductive networks that emerge in complex thermoelectric materials. For thermal transport, we summarise the approaches for studying thermal transport based on phonon-phonon interactions valid for conventional solids, as well as some quantitative efforts for nanostructures. We also discuss the thermal transport in complex materials with chemical-bond hierarchy, in which a portion of the atoms (or subunits) are weakly bonded to the rest of the structure, leading to an intrinsic manifestation of part-crystalline part-liquid state at elevated temperatures. In this review, we provide a summary of achievements made in recent studies of thermoelectric transport properties, and demonstrate how they have led to improvements in thermoelectric performance by the integration of modern theory and experiment, and point out some challenges and possible directions. INTRODUCTION Thermoelectric (TE) materials are materials that can generate useful electric potentials when subjected to a temperature gradient (known as the Seebeck effect). Conversely, they also transfer heat against the temperature gradient when a current is driven against this potential (known as the Peltier effect). They are promising energy materials with many applications, such as waste heat harvesting, radioisotope TE power generation, and solid state Peltier refrigeration, all of which are driving growing research interest. A key challenge is to improve the TE properties in order to obtain more efficient energy conversion and in turn enable new practical applications. Good TE materials must have excellent electrical transport properties, measured by the TE power factor ( = S 2 σ, where S is the Seebeck coefficient and σ is the electrical conductivity), and also a very low thermal conductivity κ (composed of the electronic contribution κ e , the lattice contribution κ L , and the bipolar contribution κ bi ). Combining the two aspects gives us the dimensionless figure of merit ZT,

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“…(b) Hall carrier concentration dependent Seebeck coefficients of A 2 Cu 3 In 3 Te 8 (A = Cd, Zn, Mn, Mg) compounds at RT in comparison with other typical diamond-like chalcogenides. ,− ,− The three solid lines in part b are generated using a single parabolic band approximation with an effective mass of 1.24 m e (cyan line), 0.93 m e (navy line), and 1.85 m e (olive line), respectively. (c) Density of states effective masses m * versus the c /2 a ratios of A 2 Cu 3 In 3 Te 8 (A = Cd, Zn, Mn, Mg) in comparison with other diamond-like chalcogenides. ,− ,− , The broken line in part c serves as a guide to the eye. (d) Density of states (DOS) for A 2 Cu 3 In 3 Te 8 (A = Cd, Zn) compounds in comparison with Cd 4 Cu 2 In 2 Te 8 and Cu 4 In 4 Te 8 .…”

Section: Resultsmentioning

confidence: 99%

A₂Cu₃In₃Te₈ (A = Cd, Zn, Mn, Mg): A Type of Thermoelectric Material with Complex Diamond-like Structure and Low Lattice Thermal Conductivities

Pan

Wang

Zhang

et al. 2019

ACS Appl. Energy Mater.

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In this work, A 2 Cu 3 In 3 Te 8 (A = Cd, Zn, Mn, Mg) thermoelectric chalcogenide materials, exhibiting intrinsically complex structures, low lattice thermal conductivities, high Seebeck coefficients, and thus promising thermoelectric properties, are designed and explored, by a systematic complex structure search surpassing the conventional doping and carrier concentration optimizing approach. The newly introduced alloying elements A (A = Cd, Zn, Mn, Mg) are found to uniformly distribute at the 4a and 4b sites which are solely occupied by Cu and In in the cation sublattice of A 2 Cu 3 In 3 Te 8 , leading to the strong cation disordering but surprisingly stable phase. The cation disordering preserves the high structure symmetry and enhances the phonon scattering, leading to reasonably good electrical transport properties coexisting with extremely low lattice thermal conductivities (as low as ∼0.32 W m −1 K −1 for Cd 2 Cu 3 In 3 Te 8 at 873 K). A peak thermoelectric figure of merit zT ∼ 0.9 at 873 K is achieved for Cd 2 Cu 3 In 3 Te 8 , which is one of the highest zT values for the pristine diamond-like compound. Also, a maximal average zT of 0.38 is obtained in the Cd 2 Cu 3 In 3 Te 8 sample, which is 54% higher than the value of prototype CuInTe 2 . Our results indicate that the A 2 Cu 3 In 3 Te 8 compound and its derivative I 4−x −III 4−x −A 2x −VI 8 (I = Cu, Ag; III = Al, Ga, In; A: divalent cations; VI = S, Se, Te; 0 < x < 4) are a promising family of thermoelectric materials with an intrinsically complex structure and low lattice thermal conductivity. KEYWORDS: A 2 Cu 3 In 3 Te 8 , thermoelectric materials, diamond-like structure, cation disordering, lattice thermal conductivity

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Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Cited by 7 publications

References 41 publications

Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective

A₂Cu₃In₃Te₈ (A = Cd, Zn, Mn, Mg): A Type of Thermoelectric Material with Complex Diamond-like Structure and Low Lattice Thermal Conductivities

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Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Cited by 7 publications

References 41 publications

Improved Thermoelectric Performance of In‐Doped Quaternary Cu2MnSnSe4 Alloys

Improved Thermoelectric Performance of In‐Doped Quaternary Cu2MnSnSe4 Alloys

On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective

A2Cu3In3Te8 (A = Cd, Zn, Mn, Mg): A Type of Thermoelectric Material with Complex Diamond-like Structure and Low Lattice Thermal Conductivities

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Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

Improved Thermoelectric Performance of In‐Doped Quaternary Cu₂MnSnSe₄ Alloys

A₂Cu₃In₃Te₈ (A = Cd, Zn, Mn, Mg): A Type of Thermoelectric Material with Complex Diamond-like Structure and Low Lattice Thermal Conductivities