Heterostructure FET model including gate leakage

Ruden, P.P.

doi:10.1109/16.59919

Cited by 11 publications

(1 citation statement)

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“…The device model developed for this investigation is a charge-control/gradual-channel approximation model [4] that incorporates salient results of previous Monte Carlo electron transport simulations for GaN as a function of the ambient temperature. [5] A good approximation for the relationship between the channel carrier concentration, n s , and the gate voltage is a critical prerequisite for an accurate charge-control model.…”

Section: Device Model and Key Parametersmentioning

confidence: 99%

Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

Ruden

Albrecht

Sutandi

et al. 1999

MRS Internet j. nitride semicond. res.

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Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1 m gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

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Section: Device Model and Key Parametersmentioning

confidence: 99%