Heterostructure-barrier-varactor design

Stake, Jan; Jones, Stephen H.; Dillner, Lars; Hollung, S.; Kollberg, E.

doi:10.1109/22.841959

Cited by 48 publications

(17 citation statements)

References 20 publications

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“…The barrier thickness is optimized for minimum leakage current and maximum breakdown voltage [17]. The device area and the number of barriers are designed to handle ca 1W of the input power [18]. The HBV material structure was grown on 3 " InP substrate by molecular beam epitaxy.…”

Section: A Hbv Devicesmentioning

confidence: 99%

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

Malko

Vukušić

Stake

2013

IEEE Electron Device Lett.

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Abstract-We present an integrated heterostructure barrier varactor (HBV) frequency tripler on silicon substrate. The InGaAs/ InAlAs/ AlAs material structure was transferred onto the silicon wafer using low temperature plasma assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9 % 3-dB bandwidth.Index Terms-Frequency multipliers, heterostructure barrier varactors, heterogeneous integration, integrated circuits, millimeter-wave diodes, silicon, wafer bonding, III-V semiconductors.

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Section: A Hbv Devicesmentioning

confidence: 99%

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

Malko

Vukušić

Stake

2013

IEEE Electron Device Lett.

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“…This means that the circuit design becomes more complex with higher multiplication factor, since all the intermediate harmonics must be terminated in proper impedances in order for the multiplier to 1531-1309/$26.00 © 2011 IEEE operate well [8], [9]. The HBV device has a symmetric capacitance-voltage characteristic (Fig.…”

Section: Circuit Designmentioning

confidence: 99%

A 175 GHz HBV Frequency Quintupler With 60 mW Output Power

Malko

Vukušić

Stake

2012

IEEE Microw. Wireless Compon. Lett.

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In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single Heterostructure Barrier Varactor (HBV) diode that is flip-chip soldered into a microtsrip matching circuit. All the matching is done "on-chip" and there is no need for dc bias. The multiplier block is very compact (25 9 8 mm 3 ).

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“…Using a multidimensional perturbative method, the solution of (7) can be expressed as a series of solutions indexed by a vector (8) Substituting (8) in (7) and equating with zero the coefficients of the terms leads to the solution of (7), obtained in a recursive manner, shown in (9) at the bottom of this page.…”

Section: B Th-order Capacitance-voltage Dependenciesmentioning

confidence: 99%

“…An extensively studied example is the nonlinear transmission line [6], which (in the most popular version), consists of inductors and voltage-dependent capacitors (varactors [7], [8]) [9]- [17] and has been implemented using Schottky barrier strip lines [18], micromachined waveguides [19], as well as using structures on GaAs [20]- [23], InP [24], and Si [25] substrates. However, due to loss and limited input power, the high-frequency components in the output are usually small.…”

Section: Introductionmentioning

confidence: 99%

Harmonic Generation Using Nonlinear LC Lattices

Lilis

Park

Lee

et al. 2010

IEEE Trans. Microwave Theory Techn.

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Nonlinear LC lattices have shown promise for highpower high-frequency signal generation. Here we offer the first detailed study of the frequency response of these lattices, as well as a method designed to find input excitation frequencies that result in intense harmonic generation. The crux of the method is to locate regions in frequency space where the spectral norm of the lattice response matrix is large. When the fundamental excitation frequency (or one of its multiples) is located in these regions, the lattice harmonic response is intensified. These findings are supported by extensive numerical simulations and experimental measurements. We deal chiefly with a first-order dependency of capacitance (C) on voltage (V); however, it is also shown that lattices with higher order C-V dependencies achieve proportionally higher harmonic generation. Simulations using a 0.13-m CMOS process indicate harmonic generation at 400 GHz (three times the cutoff frequency of the fastest active device in this process), suggesting potential applications of this lattice topology in terahertz range devices.

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Heterostructure-barrier-varactor design

Cited by 48 publications

References 20 publications

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

A 175 GHz HBV Frequency Quintupler With 60 mW Output Power

Harmonic Generation Using Nonlinear LC Lattices

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