“…[356] A number of absorbers including Se (IPCE ¼ 16.1%, Z ¼ 0.13%, V OC ¼ 600 mV, J SC ¼ 3.0 mA cm À2 at 800 W m À2 ), [357] CdS (0.4%), [357] In 2 S 3 (3.4%), [358,359] [353,360] PbS, [361] a-Si:H (1%), [361] CdTe, [362,363] CdSe (IPCE ¼ 60%, 400-500 nm, APCE $ 100%, Z ¼ 1.3%, J SC ¼ 2.3 mA cm -2 , V OC ¼ 0.86 V, FF ¼ 0.651 sun), [364] (a) [354] with permission from Elsevier HgCdTe, [365] Cu 2-x S(0.06%), [366] and Sb 2 S 3 [367] have been used. p-Type materials such as b-CuSCN and ZnTe fill the voids and complete the device.…”