Heterojunction Photoanode of Atomic-Layer-Deposited MoS<sub>2</sub> on Single-Crystalline CdS Nanorod Arrays

Ho, Thi Anh; Bae, Changdeuck; Joe, Jemee; Yang, Han-Chul; Kim, Sungsoon; Park, Jae Hyung; Shin, Hyunjung

doi:10.1021/acsami.9b11178

Cited by 53 publications

(37 citation statements)

References 68 publications

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“…Biosensor [188] 400 tens of nm rough film (cryst.) Biosensor [189] 450 ≈5-50 nm rough films (≈10-20 nm) OER [190] 390-470 1-3 ML flakes (≈50-400 nm) 4-5 ML films (≈400 nm) - [119] 250-325 20−70 nm rough films (10-100 nm) HER 2017 [191] 150-300 5-50 nm rough films (10-300 nm) LIB, NIB [192] 250-300 ≈5-70 nm rough films (10-50 nm) PEC [193] 250 ≈20 nm rough film (≈10-20 nm) PEC [194] 250 ≈7-30 nm rough film (≈10-30 nm) PEC [195] 200-420 1-8 ML films (10-25 nm) FET [196] MoCl 5 + S(SiMe 3 ) 2 375 (800, S) 8 ML film (as-dep. amorp., ann.…”

Section: Atomic Layer Deposition Processes For 2d Metal Dichalcogenidesmentioning

confidence: 99%

“…Improved stability 2019 [195] Mo Onset potential +0.53 V, η 10 = −500 mV IPCE 44%@450 nm (0 V) Improved stability (up to 7 h) 2019 [283] 2020 [247] a) For brevity, inert components (N 2 , Ar) of reactive atmospheres are omitted; b) ALD-grown layers are marked by an asterisk (*) and the TMDC layer is bolded; c) A Pt counter electrode was used except for an IrO x /Ir electrode [283] ; d) All biases are reported (converted if needed) versus RHE. Unlike the electrocatalytic water splitting, the overpotentials are written with a positive/negative sign with respect to the thermodynamic potential.…”

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confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Atomic Layer Deposition Processes For 2d Metal Dichalcogenidesmentioning

confidence: 99%

mentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…The time‐resolved transient photoluminescence (TRPL) spectra in Figure b were also recorded to gain insight into the charge‐carrier dynamics . TRPL curves were fitted to a biexponential decay model using the following equation

Δ A_{decay} = A_{1} \exp (- t / τ_{1}) + A_{2} \exp (- t / τ_{2}) + Δ A_{0}

where τ 1 and τ 2 represent the lifetimes of the fast and slow decay processes . The fitted data of intensity‐average carrier lifetime are calculated according to the following equation

τ = (A_{1} τ_{1}^{2} + A_{2} τ_{2}^{2}) / (A_{1} τ_{1} + A_{2} τ_{2})

According to the fitting data in Figure b, bare CdIn 2 S 4 photoanode presents a quick recombination with a carrier lifetime of 1.38 ns, consistent with its relatively inferior charge‐transfer capability.…”

Section: Resultsmentioning

confidence: 99%

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Tian

Meng

et al. 2020

Adv Materials Inter

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Due to its suitable band energy level and small band gap, CdIn2S4 is a promising photoanode for photoelectrochemical (PEC) water splitting. Nevertheless, the serious charge recombination at the back contact and photoelectrode/electrolyte interface severely hinders its PEC activity. Herein, a facile magnetron ion‐sputtering strategy is adopted to fabricate TiO2 underlayer and NiO overlayer to modify both sides of CdIn2S4 photoanode. The TiO2 underlayer serves as an electron transport layer to promote electrons transfer from CdIn2S4 to fluorine‐doped tin oxide substrate and hinder holes' transportation, thus suppressing the charge recombination at the back contact. NiO, as a p‐type semiconductor, forms a p‐n heterojunction with CdIn2S4, inducing a built‐in electric field to facilitate charge transport. Meanwhile, NiO overlayer acts as a co‐catalyst to enhance surface reaction kinetics, and thereby improves the carrier injection efficiency at photoelectrode/electrolyte interface. As a result, the optimum TiO2/CdIn2S4/NiO photoanode exhibits photocurrent as high as 0.6 mA cm−2 at 1.23 V versus reversible hydrogen electrode, which is about 2.3 times that of bare CdIn2S4. This work provides an effective strategy to manipulate the charge carrier dynamics to improve the PEC activity of photoanode.

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“…−1.0 V vs. Ag/AgCl), due to the higher conduction band of TPE-Ca. The photocurrent density of CdS/TPE-Ca (2.55 mA cm −2 ) can be compared to the recent developed CdS/MoS 2 (1.9 mA cm −2 ) [41], CdS/WO x (10 µA cm −2 ) [42], and CdS nanowires (2.0 mA cm −2 ) [43]. Subsequently, the electrochemical impedance spectroscopy (EIS) Nyquist plots was conducted to demonstrate the electrochemical kinetics toward the interfaces between samples and electrolyte.…”

Section: Photoelectrochemical Cellmentioning

confidence: 99%

Novel Aggregation-Induced Emission Materials/Cadmium Sulfide Composite Photocatalyst for Efficient Hydrogen Evolution in Absence of Sacrificial Reagent

Wang

et al. 2020

Materials

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This work focuses on the development of a novel organic–inorganic photoactive material composited by aggregation-induced emission luminogens (AIE) and CdS. Tetraphenylethene-based AIE (TPE-Ca) is synthesized on CdS to form CdS/TPE-Ca electrode, due to its suitable band structure and potential capability of renewable energy production. The CdS/TPE-Ca electrode presents over three-fold improved photocurrent density and dramatically reduced interfacial resistance, compared with the pure CdS electrode. In addition, the engineering of the band alignment allows the holes to accumulate on the valance band of TPE-Ca, which would partially prevent the CdS from photo-corrosion, thus improving the stability of the sacrificial-free electrolyte photoelectrochemical cell.

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Heterojunction Photoanode of Atomic-Layer-Deposited MoS₂ on Single-Crystalline CdS Nanorod Arrays

Cited by 53 publications

References 68 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Novel Aggregation-Induced Emission Materials/Cadmium Sulfide Composite Photocatalyst for Efficient Hydrogen Evolution in Absence of Sacrificial Reagent

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Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays

Cited by 53 publications

References 68 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn2S4 Photoanode toward Improved Photoelectrochemical Water Splitting

Novel Aggregation-Induced Emission Materials/Cadmium Sulfide Composite Photocatalyst for Efficient Hydrogen Evolution in Absence of Sacrificial Reagent

Contact Info

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Resources

About

Heterojunction Photoanode of Atomic-Layer-Deposited MoS₂ on Single-Crystalline CdS Nanorod Arrays

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting