Heterojunction of SrTiO3/TiO2 nanotubes with dominant (001) facets: Synthesis, formation mechanism and photoelectrochemical properties

In Situ Growth of Metallic 1T-MoS2 on TiO2 Nanotubes with Improved Photocatalytic Performance

“…As shown in Figure d, two O 1s peaks at 530.5 and 529.1 eV are present. The first peak corresponds to the O atom bonded to Ti, and the latter one is ascribed to the surface hydroxyl species . Compared with the curves in Figure S1b,c, it could be seen that both binding energies of Ti 2p and O 1s 1T-MoS 2 @TNTs are slightly shifted, which indicates the existence of electron interaction between 1T-MoS 2 and TNTs.…”

Fabrication of a ternary CdS/ZnIn2S4/TiO2 heterojunction for enhancing photoelectrochemical performance: effect of cascading electron–hole transfer

“…Such coverage facilitates immediate interaction of nanoparticles with TiO 2 nanorods resulting in higher absorption of incident light leading to enhanced photoelectrochemical performance. 43 As a result, the electron-hole pairs are generated and separated effectively at the interface of the CdS/TiO 2 . These results are in agreement with the previous literature.…”

“…It was reported that the Fermi energy levels of individual components in the heterojunction tend to descend and rise up, which can form an electric eld at the interface of the heterojunction system. 43 This also helps photoinduced electrons and holes to transfer thermodynamically from the conduction band of CdS to TiO 2 /FTO. 50 As a result, recombination between electrons and holes is repressed, increasing the probability that electrons and holes will contribute to the oxidation-reduction reactions.…”

The enhancement of photocatalytic performance of SrTiO3 nanoparticles via combining with carbon quantum dots

“…In order to more deeply understand the photodegradation mechanism of the CQD/SrTiO 3 nanocomposite, the VB and CB edge potentials of SrTiO 3 were estimated according to the equations E VB = X − E e + 0.5 E g and E CB = E VB − E g , where X is the electronegativity of the semiconductor, 4.94 eV for SrTiO 3 , 53 E e the energy of free electrons on the hydrogen scale (about 4.5 eV), and E g the band gap energy of the semiconductor, 3.16 eV for SrTiO 3 ( Fig. 5 ).…”