Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays

Tsaur, B. Y.; Chen, Chenson K.; Paul, Susanne

doi:10.1117/12.151535

Cited by 27 publications

(8 citation statements)

References 12 publications

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“…3,4,8 This thin doping setback layer forms an additional barrier for excited carriers, resulting in higher threshold energies than determined for samples without these setback layers. 3,4,8 This thin doping setback layer forms an additional barrier for excited carriers, resulting in higher threshold energies than determined for samples without these setback layers.…”

Section: Resultsmentioning

confidence: 97%

“…3,4,8,15,16,18 A simple sketch of the band diagram showing the valence band profile of a heavily p-doped (2ϫ10 20 cm Ϫ3 ͒ SiGe 0.35 well surrounded by two undoped Si spacer layers can be seen in Fig. 3,4,8,15,16,18 A simple sketch of the band diagram showing the valence band profile of a heavily p-doped (2ϫ10 20 cm Ϫ3 ͒ SiGe 0.35 well surrounded by two undoped Si spacer layers can be seen in Fig.…”

Section: Theorymentioning

confidence: 99%

“…Imaging systems of IR detectors with focal plane array ͑FPA͒ technology have important applications in both commercial and military areas. 3,4 SiGe grown on Si substrate is for that purpose an ideal material system that offers detector sensitivity in the whole SWIR, MWIR, and LWIR wavelength regime [5][6][7] and is based on the mainstream Si technology for the fabrication of large-area FPAs, which can be monolithically integrated with the Si readout circuit. The military applications include night vision, rifle sight, military surveillance, guidance, and tracking for missiles as well as for interceptors.…”

Section: Introductionmentioning

confidence: 99%

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Novel mid-infrared silicon/germanium detector concepts

et al. 2000

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Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy (MBE) on double-sided polished ͗100͘Si substrates for mid-IR (3 to 5 m and 8 to 12 m) detection. The samples are characterized by secondary ion mass spectroscopy (SIMS), x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays (FPAs) with 256ϫ256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photoemission (HIP) of photogenerated holes from a heavily p-doped (p ϩϩ ϳ5ϫ10 20 cm Ϫ3 ) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge-and B-grading, double-and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies up to ext ϳ0.5% at 77 K and 4, detectivities up to 8ϫ10 11 cmͱHz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single-and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

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Section: Resultsmentioning

confidence: 97%

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Novel mid-infrared silicon/germanium detector concepts

et al. 2000

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“…These alloys seem promising candidates as substitute material for Si in low-power and high speed semiconductor devices [1]. Interesting properties range from enhanced mobility [2] to appearance of new direct optical transitions [3].Si-Ge semiconductors are being used to create high-performance bipolar transistors and integrated circuits [4,5], highly integrated focal-plane array infrared detectors [6], and infrared light-emitting diodes [7]. The wide range of applications of Si-Ge alloys have been presented nowadays also to a wider public [8].…”

Section: Introductionmentioning

confidence: 99%

Electronic and Optical Properties of SiGe alloys within first-principles schemes

Cappellini¹,

Satta²,

Palummo

et al. 2004

MRS Proc.

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We present first-principles calculated electronic and optical properties of some SiGe alloys. The ground-state, electronic excitations and optical properties have been calculated with Ge and Si atoms arranged in different ways among the sites of a diamond-type lattice. For the ground state a DFT-LDA scheme and for the electronic excitations a DFT-GW approach have been respectively used. For the optical properties the DFT-LDA-RPA scheme has been applied for alloys going in composition from Si(100%) to Ge(100%) : obtained results have been compared with existing experimental and theoretical data. For the noticeable Si(50%)Ge(50%) alloy also two-particle effects have been evaluated using the Bethe-Salpeter equation.

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“…Si-Ge semiconductors are being used to create highperformance bipolar transistors and integrated circuits, 1,2 highly integrated focal-plane array infrared detectors, 3 and infrared light-emitting diodes. 4 This progress demonstrates considerable promise for Si-based high-speed, low-power electronic, and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopy of band-to-band optical transitions in Si-Ge alloys and superlattices

et al. 1998

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We report the results of an extensive study of band-to-band optical transitions in Si-Ge (n:m) superlattices and alloys where nϷm. Our samples were grown by molecular-beam epitaxy on ͑001͒ silicon using symmetrically strained layers and characterized by high-resolution x-ray diffraction and transmission electron microscopy. This growth procedure permits the synthesis of continuous Si-Ge superlattices with a thickness of several thousand Å. Optical absorption was studied by photocurrent spectroscopy at 300, 77, and 4.2 K. These results were analyzed to determine the dependence of the photocurrent on the photon energy. The energy dependence of absorption was also measured by optical transmission spectroscopy. Analysis of these experiments gives approximate agreement with photoconductivity experiments on the value of the energy gap, but also shows that the energy dependence of the absorption coefficient varies linearly with the photon energy, while photoconductivity experiments show that the photocurrent increases with the fourth power of the energy. The absorption coefficient, and its dependence on the photon energy, are calculated directly from the joint density of states which is extracted from the electronic band structure. Our calculations show that the dependence of optical absorption on photon energy is linear for perfect superlattices: ␣(ប)ϭA 0 (បϪE g ) x , where xϭ1, with the exponent increasing above 1 in the presence of disorder such as from atomic steps, interface roughness, and similar defects. ͓S0163-1829͑98͒06715-0͔ PHYSICAL REVIEW B 15 APRIL 1998-I VOLUME 57, NUMBER 15 57 0163-1829/98/57͑15͒/9128͑13͒/$15.00 9128

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Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays

Cited by 27 publications

References 12 publications

Novel mid-infrared silicon/germanium detector concepts

Novel mid-infrared silicon/germanium detector concepts

Electronic and Optical Properties of SiGe alloys within first-principles schemes

Spectroscopy of band-to-band optical transitions in Si-Ge alloys and superlattices

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