Heterointegration of Compound Semiconductors by Ultrathin Layer Splitting

Moutanabbir, Oussama

doi:10.1149/1.3485617

Cited by 4 publications

(3 citation statements)

References 48 publications

(55 reference statements)

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“…The left peak represents the Ge(004) peak and the right peak means the Si(004) peak. As we all know that the H + implantation of the Ge substrate leads to the formation of the point defects induced by the atom voids in the exfoliated Ge film due to the interaction of H + with Ge atoms [34,35]. This results in the widening of the Ge(004) peak of the Ge film, as shown in figure 9(a).…”

Section: Characterization Of the Ge/sio 2 Bonded Interface And Ge Fil...mentioning

confidence: 98%

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Zhou

Shengquan

et al. 2020

Semicond. Sci. Technol.

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We investigate the effect of the annealing temperature and annealing time on the bubble evolution on the hydrogen ion (H + )-implanted germanium (Ge) substrate. It is found that the H 2 aggregates gradually with the increase of the annealing time, and the aggregation rate of the H 2 increases with the increase of the annealing temperature. Low-temperature Ge/Si wafer bonding (a-Ge interlayer) and Smart-Cut ™ technique are applied to fabricate high-quality Ge-on-insulator (GOI). It is proved that thick Ge film is more difficult to be exfoliated from the Ge substrate. As long as the pressure in the bubbles is high enough, although the bubbles do not burst on the Ge surface, the lateral diffusion of H 2 may occur to trigger the exfoliation of the Ge film. The contact of the wafers leads to the lateral merging of the small bubbles, resulting in the increase of the bubble size at the edge of the big void. It is believed that high bonding strength between Ge and SiO 2 is essential to resist the high pressure in the bubble for the successful exfoliation of the Ge film. The point defects in the Ge film can be totally eliminated either by high-temperature annealing or by nanosecond pulse laser annealing, resulting in the improvement of the Ge film quality.

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Section: Characterization Of the Ge/sio 2 Bonded Interface And Ge Fil...mentioning

confidence: 98%

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Zhou

Shengquan

et al. 2020

Semicond. Sci. Technol.

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“…Installation and integration of III-V compound semiconductor light-source components such as light-emitting diodes (LEDs) [1][2][3][4][5] and laser diodes [6][7][8][9][10][11] on Si is of a significant importance in the field of optoelectronics. Semiconductor wafer bonding [12][13][14][15][16][17][18][19] is a versatile fabrication method, widely used in optoelectronics. The bonding technique is able to form heterostructures of dissimilar semiconductor materials with high crystalline qualities, while the conventional epitaxial growth method inevitably generates substantial levels of defect densities due to crystalline lattice mismatches [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

III–V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding

Nishigaya

Tanabe

2020

ECS J. Solid State Sci. Technol.

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Monolithic on-chip integration of III-V compound semiconductor light-source components particularly on Si platforms is thought to be an important key technology in modern optoelectronics. Hydrogel-mediated semiconductor wafer bonding is an emerging technique for heterogeneous materials integration, simultaneously forming interfaces with high mechanical stability, electrical conductivity, optical transparency, and surface-roughness tolerance [K. Kishibe and K. Tanabe, Appl. Phys. Lett., 115, 081601 (2019)]. So far, its experimental demonstration has been limited to homogeneous Si/Si bonding and an application of solar-cell device. Here we demonstrate the fabrication and operation of a III-V light-emitting diode on Si, via heterogeneous GaAs/Si hydrogel-mediated wafer bonding. The bonding process is carried out in ambient air at room temperature, and therefore can potentially provide significant cost and throughput advantages in device production. Bonding with an unpolished back surface of semiconductor wafer with a micrometer-scale roughness is realized thanks to the deformability of hydrogel. The luminescence characteristics of the bonded device on Si are measured comparable to an unbonded reference. Stable operations of the device at over 70 ºC and for over 100 hours are demonstrated. Our experimental results verify the further suitability of the hydrogel-mediated semiconductor bonding scheme for optoelectronic device applications.

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“…Semiconductor wafer bonding is a versatile fabrication scheme used in a variety of applications in electronics and photonics. [1][2][3][4][5][6] Representative optoelectronic devices generated through wafer bonding include light-emitting diodes, [7][8][9] lasers, [10][11][12] optical modulators, 13,14 photodetectors, [15][16][17] and solar cells. [18][19][20] To date, semiconductor wafer bonding process is typically carried out in vacuum chambers in cleanrooms, which inevitably takes substantial running costs.…”

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confidence: 99%

Electrical Conductance at Directly Bonded Si/Si Interfaces in Dependence on Oxygen Concentration in Bonding Ambient

Inomata¹,

Sano²,

Tanabe³

2022

ECS J. Solid State Sci. Technol.

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Direct semiconductor wafer bonding is a versatile fabrication scheme for high-performance optoelectronic devices. In the present study, the influence of oxygen concentration in the bonding ambient on the electrical conductance at directly bonded Si/Si interfaces is experimentally investigated in relation to interfacial oxidation. The interfacial electrical conductivity is observed higher for lower oxygen concentration at each bonding temperature in the range of 200 °C–400 °C. Ohmic contact characteristics are found attainable in the bonded interfaces by proper choice of bonding conditions. To support the electrical conductance trend, an X-ray photoelectron spectroscopy analysis confirms the extent of interfacial oxidation to be higher for lower oxygen concentration and higher bonding temperature. In addition, solar cell fabrication and operation with a current path through the bonded interface are demonstrated by using the bonding method in a low oxygen concentration ambient. The energy conversion efficiency of the bonded cell is observed comparable to that of an unbonded reference, to thus verify the suitability of the bonding scheme for device applications.

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Heterointegration of Compound Semiconductors by Ultrathin Layer Splitting

Cited by 4 publications

References 48 publications

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

III–V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding

Electrical Conductance at Directly Bonded Si/Si Interfaces in Dependence on Oxygen Concentration in Bonding Ambient

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