Heterogeneously integrated ligtht sources on bulk-silicon platform

Shin, Dongjae; Cha, Junghwa; Shin, Yong-hwack; Ha, K. H.; Lee, Chang Bum; Shin, Changyong; Shim, Dongshik; Choi, Byoung Lyong; Hong, Hyeongsun; Lee, Kyu Pil; Kang, Ho-Kyu

doi:10.1109/iedm.2018.8614601

Cited by 7 publications

(12 citation statements)

References 8 publications

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“…The pattern-dependent yield instability may imply that the flatness of the patterned silicon prior to the SPE process affects the bonding yield. Further process details can be found in the previous reports [33], [34], [37].…”

Section: B Process Of Iii/v-on-bs Platformmentioning

confidence: 99%

“…The III/V-on-Si PD is a reverse-biased optical amplifier with optimized length and width of the Si WG, and it features responsivity of 0.75 A/W and dark current of 150 nA at bias voltage of -1 V. Further analysis on the modulation bandwidth remains. Details of the III/V-on-BS devices can be found in the previous reports [33], [34]. The last missing key device for the library is the optical isolator, which allows the optical transmission in only one direction and prevents unwanted optical reflections [35].…”

Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 99%

See 1 more Smart Citation

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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The CMOS industry has been expecting silicon photonics to provide photonic and electro-photonic integrated circuits based on the CMOS processes and infrastructures for scalability of incumbent technology evolutions and creation of novel technologies. However, the compatibility with the legacy CMOS has been compromised with the development convenience of early silicon photonics in that the specialty silicon-on-insulator substrates have been widely used as integration platforms. Since this specialty substrate may hinder the photonics integration with legacy volume products later, a legacy-friendly integration platform with a generic bulk-silicon substrate has been developed for better compatibility. This paper overviews the bulk-silicon photonics platform born for DRAM integration, upgraded with III/V-on-bulk-Si lasers, and transplanted to LiDAR applications requiring the virtuous cycle of cost and volume. The photonics integration with DRAM was to resolve the speed-capacity tradeoff in the DRAM interconnects, and technical feasibility as well as lessons learned from the integration attempt are reviewed. The bulk-silicon device performance approaches that of silicon-oninsulator devices with the thermal advantage of ~40-% lower thermal impedance and the optical disadvantage of ~0.4-dB/mm higher waveguide loss. In the LiDAR applications, detection performance up to ~20 m at 20 fps by a single-chip scanner integrating tunable laser, semiconductor optical amplifiers, and optical phased array are presented with future outlooks.

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Section: B Process Of Iii/v-on-bs Platformmentioning

confidence: 99%

Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 99%

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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“…From the technological perspective, silicon (Si) photonics emerged as an enabling technology for solid-state optical beam steering. This is because various Si-based photonics devices have recently become available for integration with the scalability and yields from the Si industry [2,[15][16][17][18][19][20]. This combination of market demand and enabling technologies triggered intense research efforts on Si-photonics-based optical beam steering.…”

Section: Introductionmentioning

confidence: 99%

Aperiodic optical phased array based on number theory

Shin¹,

shin²,

Lee³

et al. 2023

Preprint

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The optical phased array has been developed to realize solid-state optical beam steering following the advent of silicon photonics. Thus far, its feasibility has lacked either steering quality or optical efficiency, and its optimal design still remains unknown. Herein, we propose a scalable and wavelength-independent phased array design methodology that achieves steering quality and optical efficiency. This novel design methodology is based on a special aperiodicity from number theory of a complete residue system that is fundamentally suited for phasor cancellation for the desired array sparsity. A specific design derived based on this methodology was implemented in silicon with 128 phase-controlled antennas in the O band, and it was experimentally verified in a two-dimensional steering demonstration that featured a record-high beam-forming efficiency (>30%) and a high-grating-lobe suppression (>10 dB) over a field-of-view of 40 ⅹ 7.2°. This optical efficiency improved by at least 250% compared with prior art.

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“…Light intensity, which affects the reverse current of the diode, of the plasma can be simulated with the technique suggested in H. Shin's paper [2]. We used the fluorescent light tube to simulate the plasma light intensity on the probe station.…”

Section: Resultsmentioning

confidence: 99%

“…And protection diode has been purposed to use in avoiding plasma charging current [2]. But there has not been reported work done to find out the reliability and the limitation of the diode in the plasma ambient.…”

Section: Introductionmentioning

confidence: 99%