2006 1st Electronic Systemintegration Technology Conference 2006
DOI: 10.1109/estc.2006.280020
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Heterogeneous Integration Technique of Optoelectronic Dies to CMOS Circuits Via Metallic Bonding

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Cited by 2 publications
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“…Both, g and κ varied with location (coordinates x, y, and z). We have taken into account the temperature dependency κ(T ) ∼ T −1.4 [33] (originally estimated for GaN when T ranges 300-450 K) of each nitride layer in our calculations. Convection and radiation processes in semiconductor laser can usually be neglected [32], and are not taken into consideration.…”
Section: Modelmentioning
confidence: 99%
“…Both, g and κ varied with location (coordinates x, y, and z). We have taken into account the temperature dependency κ(T ) ∼ T −1.4 [33] (originally estimated for GaN when T ranges 300-450 K) of each nitride layer in our calculations. Convection and radiation processes in semiconductor laser can usually be neglected [32], and are not taken into consideration.…”
Section: Modelmentioning
confidence: 99%