Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density

Anupam, K.C.; Anderson, Jonathan; Ayala, Anival; Engdahl, Christopher; Piner, Edwin L.; Holtz, M.

doi:10.1016/j.jcrysgro.2023.127172

Cited by 4 publications

(1 citation statement)

References 34 publications

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“…Its impact extends to material stability, band structure, and ferroelectricity, thus catalyzing advancements in the field of strain engineering. Although the AlN/diamond heterostructures have been extensively studied in the fabrication process as well as the thermal properties in the previous research efforts, ,− the mechanical properties of the heterogeneous interfaces between AlN and diamond remain unexplored because it is really challenging for the direct observation and description of the interfacial failure mechanisms of the heterostructures through the experimental methods. Molecular dynamics (MD) simulations can provide a methodology for in-depth study of interfacial interactions, and tensile strain simulations can furthermore reveal the mechanisms of structural evolution under various influencing factors, including crystal structure, thermal transport, and tensile and compressive stresses.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Qi,

Sun,

Sun

et al. 2024

ACS Appl. Mater. Interfaces

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AlN/diamond heterostructures hold tremendous promise for the development of next-generation high-power electronic devices due to their ultrawide band gaps and other exceptional properties. However, the poor adhesion at the AlN/ diamond interface is a significant challenge that will lead to film delamination and device performance degradation. In this study, the uniaxial tensile failure of the AlN/diamond heterogeneous interfaces was investigated by molecular dynamics simulations based on a neuroevolutionary machine learning potential (NEP) model. The interatomic interactions can be successfully described by trained NEP, the reliability of which has been demonstrated by the prediction of the cleavage planes of AlN and diamond. It can be revealed that the annealing treatment can reduce the total potential energy by enhancing the binding of the C and N atoms at interfaces. The strain engineering of AlN also has an important impact on the mechanical properties of the interface. Furthermore, the influence of the surface roughness and interfacial nanostructures on the AlN/diamond heterostructures has been considered. It can be indicated that the combination of surface roughness reduction, AlN strain engineering, and annealing treatment can effectively result in superior and more stable interfacial mechanical properties, which can provide a promising solution to the optimization of mechanical properties, of ultrawide band gap semiconductor heterostructures.

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Section: Introductionmentioning

confidence: 99%

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Qi,

Sun,

Sun

et al. 2024

ACS Appl. Mater. Interfaces

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Malakoutian,

Woo,

Rich

et al. 2024

Adv Elect Materials

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Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrades the performance. Self‐heating is a critical problem for high‐power, high‐frequency, wide bandgap, and ultra‐wide bandgap devices as well. Diamond, known for its exceptional thermal conductivity, offers a viable solution in both these cases. Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO2), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiNx), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. The a‐SiC interlayer reduces diamond/GaN (<5 m2K per GW) and diamond/Si (<2 m2K per GW) thermal boundary resistances by linking low‐ and high‐frequency phonons, boosting phonon transport through the interface. Engineered interfaces enhance heat spreading from the channel/junction and rule out premature failure.

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Growth of Diamond on High-Power Electronic Material

Mandal

2024

Topics in Applied Physics

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Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density

Cited by 4 publications

References 34 publications

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Growth of Diamond on High-Power Electronic Material

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