Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC

Meng, Fanman; Disney, Don; Liu, Bei; Volkan, Yildirim Baris; Zhou, Ao; Liang, Zipeng; Yi, Xiaoke; Selvaraj, S. Lawrence; Peng, Lulu; Ma, Kaixue; Boon, Chirn Chye

doi:10.1109/tpel.2018.2859419

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…One heterogeneous integration method that makes the GaN power system compatible with CMOS fabrication using SOI substrate was stated by the IBM research division [195] as shown in Figure 26. A DC-DC boost converter was designed using GaN power transistors integrated with bipolar-CMOS-DMOS (BCD) which combines both the advantages of high-voltage low-loss GaN devices and high-integration BCD circuits [196]. The designed GaN2BCD technology is a promising power converter application platform.…”

Section: Heterogeneous Integration Of Gan Hemtmentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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Section: Heterogeneous Integration Of Gan Hemtmentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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“…The dedicated Si CMOS gate drivers can be packaged in the same case or directly bonded with GaN in 3-dimension. The heterogeneous integration of GaN and Bipolar-CMOS-DMOS (BCD) has been shown by GLOBALFOUNDRIES ''GaN2BCD'' technology in [95], [96]. The driver circuits can be dedicatedly designed and fabricated in BCD process, and then integrated with GaN power devices using the die-towafer transfer (D2W) as shown in the schematic in Fig.…”

Section: Gan Power Integration Road Aheadmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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“…By integrating the GaN elements on the PCB, extra cost savings could be achieved with reduced board area. Other research aiming at reducing the size of LED drivers has tried to increase the integration level of LED drivers by moving conventionally on-board components, like power FETs and LEDs, to be integrated on-chip instead [7][8][9][10]. Specifically, in [11], lower packaging costs have been reported with the GaN LED integrated on-chip atop the BCD driver IC as the need for an additional cable to connect LED and the IC driver is eliminated.…”

Section: Introductionmentioning

confidence: 99%

92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs

et al. 2020

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LEDs are highly energy efficient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power efficiency with increased integration level for lighting device should be analysed. This paper proposes a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits. The performance of the proposed design is then compared with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC). The experimental results confirm that the fully on-chip integrated LED driver achieves a consistently higher power efficiency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V. The maximal percentage improvement in the efficiency of the on-chip solution compared with the on-board solution is 18%.

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Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC

Abstract: Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC

Cited by 11 publications

References 6 publications

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs

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