Heteroepitaxy of CuInS<sub>2</sub> on ZnSe by LPE Method from In Solution

Takenoshita, Hiroshi; Nakau, Tanehiro

doi:10.1143/jjap.21.18

Cited by 14 publications

(3 citation statements)

References 11 publications

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“…At first let R denote the set of all possible chemical (III) If the answer is yes, then the chosen possible reactions defined by (4). equilibrium line C-D is not relevant.…”

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confidence: 99%

Thermochemistry in the system Cu–In–S at 723 K

Migge

Grzanna

1994

J. Mater. Res.

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A thermochemical analysis is performed in the system Cu-In-S at 723 K. Free energies of In6S7, In417S583, "In2S3", Cugsjln^, and CuIn5S8 have been estimated, the numerical values (kJ/mol) of which are -1285, -97780, -481.1, -31680, and -1444. The free energy (kJ/mol) of CuInS2 is calculated from the relation G° = (-306.1 ± 54.4) + 0.50927 -1.397 10~5 T2 -0.09468T In T + 268.27-1, which is obtained from published assessed standard formation enthalpy and specific heat and entropy data. The free energy of the Cu-In melt is taken from very new literature. A consistent set of data is used for the calculation of a tentative Gibbs triangle as well as of the corresponding predominance area diagram. The Gibbs triangle is calculated with the program THERMO, the algorithm of which is given. The results are in agreement with the results of published measurements, also for the equilibria which involve the melt. The compound CuInS2, one of the possible base materials for thin film solar cells, is shown to equilibrate with most of the compounds of the system. Predictions are made how to prepare CuInS2 from Cu-In alloys and H2S/H2 gas mixtures. However, more experiments are necessary to establish the data, the experiments, and/or the results of the calculations.

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“…At first let R denote the set of all possible chemical (III) If the answer is yes, then the chosen possible reactions defined by (4). equilibrium line C-D is not relevant.…”

mentioning

confidence: 99%

Thermochemistry in the system Cu–In–S at 723 K

Migge

Grzanna

1994

J. Mater. Res.

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“…[4][5][6] Recently a CuInS 2 based solar cell with 10.2% efficiency has been developed by thermal coevaporation. [4][5][6] Recently a CuInS 2 based solar cell with 10.2% efficiency has been developed by thermal coevaporation.…”

Section: Introductionmentioning

confidence: 99%

“…As a consequence, the quaternary lines In 2 O 3 -CuSO4 and In 2 (SO 4 ) 3 -CuOCuSO 4 cross each other. As a consequence, the quaternary lines In 2 O 3 -CuSO4 and In 2 (SO 4 ) 3 -CuOCuSO 4 cross each other.…”

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confidence: 95%

Chemical stability of CuInS₂ in oxygen at 298 K

Grzanna

Migge

1997

J. Mater. Res.

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A thermochemical analysis is performed in the quaternary system Cu-In-S-O at 298 K, including the respective four ternaries. The Cu-In phase diagram is updated with respect to the new experimental as well as to the new thermochemical results in the literature. Free energies of In 6 S 7 , In 2.8 S 4 , CuIn 2 , and Cu 2 In 2 O 5 have been estimated. Consistent sets of data are used for the calculations of the ternary systems with the program THERMO, and the results are used to calculate the quaternary tetrahedron Cu-In -S-O with the program THERMOQ; the algorithm is given. Twelve quaternary two-phase equilibria have been found. They are used to calculate predominance area diagrams of the quaternary system with the program STADIAQ for different oxygen partial pressures. The algorithm of this program is given. From these diagrams it becomes obvious that CuInS 2 is unstable in air and even in UHV systems and should react to form In 2 (SO 4 ) 3 and Cu 2 S at oxygen pressures larger than log p͑ pascal͒ 251.5. The results are useful for research in fields such as oxidation and crystal growth of CuInS 2 and for development of processes for producing this compound.

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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Heteroepitaxy of CuInS₂ on ZnSe by LPE Method from In Solution

Cited by 14 publications

References 11 publications

Thermochemistry in the system Cu–In–S at 723 K

Thermochemistry in the system Cu–In–S at 723 K

Chemical stability of CuInS₂ in oxygen at 298 K

Liquid‐Phase Epitaxy

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Heteroepitaxy of CuInS2 on ZnSe by LPE Method from In Solution

Cited by 14 publications

References 11 publications

Thermochemistry in the system Cu–In–S at 723 K

Thermochemistry in the system Cu–In–S at 723 K

Chemical stability of CuInS2 in oxygen at 298 K

Liquid‐Phase Epitaxy

Contact Info

Product

Resources

About

Heteroepitaxy of CuInS₂ on ZnSe by LPE Method from In Solution

Chemical stability of CuInS₂ in oxygen at 298 K