Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substrates

Golecki, I.; Manasevit, H. M.; Moudy, L. A.; Yang, Juping; Mee, J. E.

doi:10.1063/1.93982

Cited by 53 publications

(23 citation statements)

References 8 publications

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“…In fact, the surface channeling yield of 0.034, measured (21) for the Y + Zr sublattice in a (Y:O3)0.12(ZrO2)0.ss sample after a 30 rain annealing in H~ at 1250~ corresponds to an essentially perfect single crystal.…”

Section: Resultsmentioning

confidence: 97%

“…This small systematic difference could be due to the HfO2 in our samples (22) and possibly to an actual Y208 content 0.4-1.5% mol lower than the nominal value. Substrate crystal quality.--The crystal quality of the as-polished YSZ substrates was found to be high by (i) the presence of diffraction spots and Kikuchi lines in RED patterns, and (ii) the presence of a surface peak and surface oscillations in RBS/channeling spectra (21). The value of the axial surface channeling yield, % = 0.07 (at 0.8 MeV 4He+ incident energy) for the u + Zr sublattice in (100) YSZ could be lowered even further by high temperature annealing as described in the next section.…”

Section: Resultsmentioning

confidence: 99%

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Si on Cubic Zirconia

Manasevit

Golecki

Moudy

et al. 1983

J. Electrochem. Soc.

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In Fig. 6, Eg (opt) vs. CH~% are shown for undoped, P-type and N-type a-SiC:H. The Eg (opt) increases monotonically with increasing CH4% in all cases. But the rates of increase in Eg (opt) with increasing CH4% are different. The order of the rate is as follows: Undoped is the first, N-type the second, and P-type the third. The rate of undoped and N-type are nearly the same. It seems that there is a small shoulder in the curves of Eg (opt) of all the a-SiC: H at nearly 40% of CH4. The Eg (opt) shrinkage was observed only for P-type a-SiC:H with increasing dopant concentration. Summary and DiscussionWe found the clear maxima in ~D in the P-type glowdischarged a-Si: H films. The origin of this peak has not yet been clarified. But it is worthy of note that the dopant and hydrogen form dopant-hydrogen complexes (6). The shoulder of the ~ph of P-type a-SiC: H reported by Tawada et al.(3) seems to be located right above the ~D peak, and the recovery of the cph by boron doping, as reported in the literature, seems to be related to th ~D peak. The peak appears to result from the two curves. One is the up slope curve and the other is the down slope one. It is inferred that the increase in ~D in the up slope curve is caused by more incorporation of boron which becomes electrically active in accordance with the increase in the flow rate of CH4, while the decrease in ~D in the range over 30% of the flow rate of CH4 is concerned v~ith the degradation of quality of the a-SiC:H and increase in Eg (opt) by the higher concentration of carbon. Studies on the origin of the peak in ~'D for the P-type a-SiC:H is presently being planned.ABSTRACT Epitaxial growth of single-crystal Si films has been realized on the (100), (110), and (111) crystallographic planes of yttria-stabilized, cubic zirconia single crystals. The Si films were grown by chemical vapor deposition, using the pyrolysis of Sill4 at temperatures in the range 950 ~ 1075~ and at deposition rates of 0.08-1.2 ~m/min. A predeposition annealing procedure has been developed, resulting in a quasi-stable, oxygen-deficient zirconia surface. A model is presented to explain the dependence of oxygen kinetics in cubic zirconia on temperature and yttria content. The heteroepitaxial Si films have been characterized by optical and scanning electron microscopies, reflection electron diffraction, x-ray diffraction, Rutherford backscattering and channeling, and surface electrical conductivity and Hall effect measurements. Several 0.4-0.5 ~m thick (100)-and (110)-oriented Si films on cubic zirconia were found to be of higher crystal quality than commercial (100) Si on sapphire films of similar thickness.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 144.122.201.150 Downloaded on 2016-03-28 to IP

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Si on Cubic Zirconia

Manasevit

Golecki

Moudy

et al. 1983

J. Electrochem. Soc.

Self Cite

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“…The first epitaxial Si films on YSZ were grown in [6]. The first successful results on epitaxial MOCVD growth of various A III B V compounds (GaAs, InAs, InGaAs, AlGaAs, GaAsN and GaN) on YSZ are presented in a number of studies [10,16,17], InN on YSZin [21,22].…”

Section: B V Compounds Epitaxymentioning

confidence: 99%

“…The process results in the oxygen non-stoichiometric ZrO 2 (HfO 2 ) based phase [4]. Because of high mobility of oxygen at high-temperature epitaxy (900…1000 0 ), which was used in [6][7][8] the formation of ether SiO 2 continuous layer or its islets between the substrate and the film was shown to be inevitable.…”

Section: Silicon-on-fianite Epitaxial Structuresmentioning

confidence: 99%