Si on Cubic Zirconia

Epitaxial (100) Si films 0.4–0.5 μm thick were grown by the pyrolysis of silane in a hydrogen atmosphere on (100) yttria‐stabilized, cubic zirconia (15 mole percent [m/o] Y2O3 ) at temperatures in the range 910°–1000°C and deposition rates of 0.06–0.58 μm/min. The heteroepitaxial Si films have been characterized by ultraviolet reflectance. Rutherford backscattering/channeling, and Hall effect measurements. It was found that the Si film quality depends strongly on substrate temperature. An optimum growth temperature range between 930° and 960°C was obtained and explained by two defect formation mechanisms: generation at growth temperature and that during cooling from growth temperature to room temperature. The best quality Si/YSZ films produced in this investigation had a value of surface channeling yield, χ0 , equal to 0.048, as compared to 0.1 for Si/YSZ films reported previously, and 0.12 for typical commercial SOS films, respectively, at 1.5 MeV 4He+ energy.

Section: Methodssupporting

confidence: 76%

“…Epitaxial Si/YSZ films have been achieved in our laboratory (6,7). Film crystal quality is indeed found to be better than commercial SOS films in the thickness range 0.4-0.5 ~m (6,7).…”

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confidence: 89%

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confidence: 99%

See 1 more Smart Citation

Influence of Growth Temperature on the Physical Properties of Si Films on Yttria‐Stabilized, Cubic Zirconia Substrates

Lin

Golecki

1985

“…Another application for epitaxial YSZ material is in the formation of silicon-on-insulator (SOI). 3,4 The YSZ material is an effective electrical insulator with a relative dielectric constant of 27 at a frequency of 10 GHz. In theory, a top Si epitaxial layer can be regrown on the YSZ film to form the SOI structure.…”

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confidence: 99%

Initial Stages of Growth of Heteroepitaxial Yttria-Stabilized Zirconia Films on Silicon Substrates

Bunt

Varhue

Adams

et al. 2000

The growth of heteroepitaxial yttria-stabilized zirconia (YSZ) has attracted considerable attention over the past 15 years due to its usefulness as a heteroepitaxial buffer layer. A specific example of its utility is in the growth of yttrium barium copper oxide (YBCO) on Si substrates. 1 Direct contact between the Si substrate and the YBCO film results in interdiffusion of components, which will spoil the superconducting properties of the YBCO film. The YSZ material forms an effective chemical buffer layer separating the Si substrate and the oxide superconducting film, while still permitting the transfer of the crystalline template structure to the superconducting film. The YSZ material film has also been used in superconductor material combinations that utilize substrate materials other than Si; e.g., rolling assisted biaxially textured Ni substrates. Another application for epitaxial YSZ material is in the formation of silicon-on-insulator (SOI). 3,4 The YSZ material is an effective electrical insulator with a relative dielectric constant of 27 at a frequency of 10 GHz. In theory, a top Si epitaxial layer can be regrown on the YSZ film to form the SOI structure. This could be performed on blanket wafers or accomplished later in the fabrication process to form isolated islands on the chip surface. Another application involving the dielectric properties of YSZ is in the formation of advanced dielectrics for dynamic random access memory devices. 5 The diffusivity of O 2 in YSZ is very high, and it is possible to grow a thermal oxide on the Si surface, subsequent to the growth of a YSZ film. The YSZ/SiO 2 sandwich structure combines the high electrical permittivity of the YSZ layer with the effective passivation of a thermal SiO 2 layer.To date, single-crystal YSZ films have been deposited on Si substrates by a variety of techniques including ion beam sputtering, 6 electron beam evaporation, 7-9 pulsed laser deposition, 10-12 reactive sputtering, 13 and metallorganic chemical vapor deposition. 14 An important component of these investigations has involved the development of a model which describes the growth of the YSZ material film at its initial stages on the Si substrate. Previous discussions were often concerned with the presence or absence of a silicon oxide film on the Si surface prior to film growth. In this investigation, the oxide layer has been shown to be essential for the heteroepitaxial growth process. Further, once epitaxial growth is established in a thin seed layer, subsequent epitaxial material can be deposited at temperatures as low as 200ЊC. ExperimentalThe YSZ thin-film samples were deposited by a reactive sputter process in an electron cyclotron resonance (ECR) reactor. Briefly, an Ar plasma stream generated in a broad beam ECR reactor was directed at the Si substrate located in the downstream position. The YSZ material was sputtered from a radio frequency (rf) coupled magnetron sputter gun located above the substrate. This apparatus was used previously to perform a similar investigation on the...

“…The growth of heteroepitaxial yttria-stabilized zirconia (YSZ) films on single crystal Si substrates has generated considerable interest with those attempting to produce Si-on-insulator (SOI) for the next generation of integrated circuit devices. 1,2 It has also interested those attempting to integrate high temperature superconductors with Si integrated circuit technology. Thin film YSZ material has been shown to be an effective heteroepitaxial buffer layer material for the growth of yttrium barium cuprate (YBCO) on Si substrates.…”

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confidence: 99%

Heteroepitaxial Growth of Yttria‐Stabilized Zirconia on Silicon (100) by Reactive Sputtering with an Electron Cyclotron Resonance Source

Lillé

Varhue

Mongeon

1999

Thin films of heteroepitaxial yttria‐stabilized zirconia (YSZ) have been deposited by electron cyclotron resonance assisted‐reactive sputtering on Si(100) substrates. The initial stages of film on the bare Si surface were determined to be critically important for the resulting quality of the crystalline film. The benefits of low energy ion bombardment to enhance the growth process were measurable at 650°C, but could not complete with the crystal quality of the material grown at 800°C. A 1050°C postdeposition anneal step using a variety of gas ambients improved crystalline quality of the deposited material. The crystalline quality of the annealed material was independent of the as‐deposited material quality. This can be significant for those attempting to grow heteroepitaxial YSZ films at reduced substrate temperatures. The reason for the improvement in crystalline quality is believed to be the reduction of stresses existing at the SiO2/YSZ interface. The X‐ray diffraction results indicate that the YSZ material film deposited by this technique is currently of the highest quality obtained by any technique to date. © 1999 The Electrochemical Society. All rights reserved.