Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD

Chung, Gwiy‐Sang; Kim, Kang San

doi:10.5012/bkcs.2007.28.4.533

Cited by 20 publications

(1 citation statement)

References 16 publications

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“…[11][12][13][14] However when the SiC film thickness is smaller than 1 µm, the number of defects in film sharply grows, and FWHM is increases to 1°. 15,16) In some cases under optimized conditions of SiC growth it was possible to decrease FWHM to 0.23°for the films with a thickness of 200 nm 17) and to 0.51°for films with a thickness of 50 nm. 9) The possibility of SiC nanolayer formation on Si as a result of carbonization of Langmuir-Blodgett (LB) films of flexible chain polyimide (PI) was shown in previous studies.…”

Section: Introductionmentioning

confidence: 99%

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Luchinin

Goloudina

Pasyuta

et al. 2017

Jpn. J. Appl. Phys.

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High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir–Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). We demonstrated that the carbonization of a PI film on a Si substrate at 1000 °C leads to the formation of a carbon film and SiC nanocrystals on the Si substrate. It was found that five planes in the 3C-SiC(111) film are aligned with four Si(111) planes. As a result of repeated annealing of PI films containing 121 layers at 1200 °C crystalline SiC films were formed on the Si substrate. It was shown that the SiC films (35 nm) grown on Si(111) at 1200 °C have a mainly cubic 3C-SiC structure with small amount of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on the Si(100) substrate at the same temperature. It was shown that the SiC films (30–35 nm) can cover the voids with size up to 10 µm in the Si substrate. The current–voltage (I–V) characteristics of the n-Si/n-SiC heterostructure were obtained by conductive atomic force microscopy.

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Section: Introductionmentioning

confidence: 99%

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Luchinin

Goloudina

Pasyuta

et al. 2017

Jpn. J. Appl. Phys.

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Growing bulk-like 3C-SiC from seeding material produced by CVD

Schuh¹,

Arzig²,

Litrico

et al. 2017

Phys. Status Solidi A

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We present a process to transfer CVD grown heteroepitaxial 3C‐SiC on Si onto polycrystalline SiC, involving an etching step to get rid of the Si and a homogeneous carbon glue deposit, facilitating the resulting compound to be used as a seeding material for further growth process. In a sublimation sandwich setup, realized within an inductively heated physical vapor transport reactor, used for bulk growth of SiC, the thickness of the 3C‐SiC seed was increased up to 850 μm while keeping the cubic polytype. With the introduction of Ta as a carbon getter, the gas phase composition is optimized in order to achieve an improved growth front. Single crystalline growth is confirmed by Laue diffraction and Raman measurements. The Raman peaks are shifted to higher wavenumbers, indicating compressive stress in the grown samples. Furthermore, a scale up of the process is demonstrated, showing the feasibility of growing 3C‐SiC on an area of 10.5 cm2 in a 2 inch setup featuring a thickness of approximately 570 μm.

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Synthesis and investigation of silicon carbide nanowires by HFCVD method

et al. 2016

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Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600-800 • C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C 2 H 5 OH) vapour and hydrogen (H 2) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version) software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructure surface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.

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Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD

Cited by 20 publications

References 16 publications

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir–Blodgett films

Growing bulk-like 3C-SiC from seeding material produced by CVD

Synthesis and investigation of silicon carbide nanowires by HFCVD method

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