Synthesis and investigation of silicon carbide nanowires by HFCVD method

Abstract

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600-800 • C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C 2 H 5 OH) vapour and hydrogen (H 2) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version) software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructure surface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

“…This technique has been used to grow a wide variety of films, including diamond [18], as well as amorphous silicon nitride [19,20], semiconductor compounds [21], and more. Recently, the technique has been used to grow several nanostructures of different materials, such as silicon-rich oxides [22], nanocrystalline silicon [23], graphene [24], molybdenum selenide [25], silicon carbide [26], and zinc sulfide [27] among others, for applications in new or improved devices, such as solar cells, sensors, and metal oxide semiconductors (MOS) structures [18,23]. HFCVD technology is compatible with the current silicon-based technology, and it has advantages over other methods because it can produce materials at low cost, and on a wide substrate surface.…”

Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD

“…The deposit of semiconductor materials using the hot filament chemical vapor deposition (HFCVD) technique is widely reported [ 21 , 23 , 24 , 25 , 26 , 27 ]. The material of the filament, used in the experimental arrangement, is selected to reach temperatures of about 2000 °C, usually tungsten, molybdenum, or tantalum.…”

“…The hot filament chemical deposition (HFVCD) technique allows the deposit of semiconductor materials with high deposition rates, low operation cost, and good control of the experimental conditions. HFCVD technique has been used to deposit a wide variety of materials including diamond [ 18 ], aluminum, silicon, and titanium nitride [ 19 ], gallium nitride [ 20 ], nanostructures of silicon-rich [ 21 ], nanocrystalline silicon [ 22 ], graphene [ 23 ], molybdenum selenide [ 24 ], silicon carbide [ 25 ], and zinc sulfide [ 26 ], among others.…”

Novel Synthesis of Silicon Carbide Nanowires from e-Waste

“…14 This makes SiC NWs especially promising for applications in microelectronics and optoelectronics, attracting considerable interest from materials and devices researchers. 15 A wide range of nanostructured SiC, including nanoparticle/ whisker composite, 16 nanoribbon, 17 nanowire (NWs), 18 nanowhiskers, 19 nanochains, 20 and fibers, 21,22 have been synthesized via several methods such as chemical vapor deposition (CVD), 23 arc discharge, 24 carbothermal reduction. Owing to its efficiency and simplicity, carbothermal reduction technique is considered as the most economically viable method.…”

“…Among these semiconductor nanowires, SiC NWs have particularly attractive properties, as they combine the well-established chemical and mechanical properties of SiC, such as wide band gap, excellent thermal conductivity, chemical inertness, high electron mobility, and biocompatibility, with the size dependent advantages/characteristics of quasi one-dimensional structures . This makes SiC NWs especially promising for applications in microelectronics and optoelectronics, attracting considerable interest from materials and devices researchers . A wide range of nanostructured SiC, including nanoparticle/whisker composite, nanoribbon, nanowire (NWs), nanowhiskers, nanochains, and fibers, , have been synthesized via several methods such as chemical vapor deposition (CVD), arc discharge, carbothermal reduction.…”