Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers

Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates

“…Currently, only a few reports are available about the growth of InSb epilayers on Ge (001) substrates. 4,5 Several types of crystalline defects can limit the electron mobility in the InSb epilayers and QWs grown on Ge (001) substrates, 1,6,7 1) anti-phase domains (APDs) that can arise when a zinc-blende epilayer is grown on a diamond-structure substrate, 2) micro-twins (MTs) that can be created when there is a lattice mismatch between an epilayer and its substrate, and 3) threading dislocations (TDs) that can also be generated in an epilayer/substrate system that has a lattice mismatch.…”

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

“…To overcome this difficulty, various buffer layers such as GaAs and Ge have been widely used [1][2][3][4][5]. By using these buffer layers, the lattice mismatch between InSb and Si is reduced to about 14.6% for GaAs and about 14.5% for Ge.…”

“…We have reported the heteroepitaxy of InSb films on a Si(0 0 1) substrate with Ge buffer layer [3][4][5]17]. In this case, the heteroepitaxial growth of InSb films on a Si(0 0 1) substrate with about 100 monolayer (ML) Ge which forms islands was achieved by means of the two-step growth procedure with a maximum temperature of 400 1C.…”

High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates

“…The presence of a single-or two-domain surface can be determined at growth conditions where the surface reconstruction has a different periodicity in the [110] and [1][2][3][4][5][6][7][8][9][10] directions, such as the (2 Â 1) surface of Ge(001). If that surface is a single-domain type, the RHEED pattern will be 2 Â in the [110] azimuth and 1 Â in the [1][2][3][4][5][6][7][8][9][10] azimuth. For a two-domain surface, with one domain type rotated by 90 with respect to the other domain type, the pattern will be 2 Â in both the [110] and [1][2][3][4][5][6][7][8][9][10] azimuths.…”

“…9,10 No reports have been published yet for the growth of InSb-based films on GeOI substrates. The large lattice mismatch (>14%), surface cleaning issues, 11 interface interdiffusion, 12 and formation of antiphase domains (APDs) 13 make growth of a high-quality InSb film on Ge and GeOI substrates a substantial challenge.…”