Heteroepitaxial GaAs on aluminum oxide. I: Early growth studies

Manasevit, H. M.; Thorsen, A. C.

doi:10.1007/bf02811586

Cited by 23 publications

(9 citation statements)

References 4 publications

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“…Our RHEED patterns are similar to those observed by Manasevit and Thorren after deposition of GaAs on sapphire by MOVPE. 16 We find that our RHEED results are consistent with the epitaxial relationship observed by Chang for silicon on (OOO1) sapphire (SOS)." Therefore, the [ll?]…”

Section: The (Oool) Sapphire Surfacesupporting

confidence: 89%

Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy

Diebold¹,

Steinhauser²,

Mariella³

et al. 1990

Surface & Interface Analysis

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Crystal epilayers of (lll)-oriented GaAs have been grown successfully on sapphire (Oool) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm2) with no grain boundaries were observed. Both substrate surface preparation and temperature controlled the crystallinity. Reflection high-energy electron diffraction (RHEED) was used to characterize the sapphire surface after omne cleaning.RHEED patterns taken at several azimuths were consistent with an outermost layer of oxygen atoms. Powder x-ray diffraction and rotation x-ray photographs were used to determine growth conditions that resulted in an improvement in the crystalline order. Cross-sectional transmission electron microscopy confirmed the crystalline nature of the GaAs epilayers. The quality of the CaAs was also characterized by photoluminesceace. Finally, crystalk quality was Bssessed using double-crystal x-ray diffraction rocking curves.

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Section: The (Oool) Sapphire Surfacesupporting

confidence: 89%

Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy

Diebold¹,

Steinhauser²,

Mariella³

et al. 1990

Surface & Interface Analysis

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“…Similar growth mechanism was observed for hetero~ epitaxially grown Si (2,4) and GaAs on sapphire (30). Experimental results indicate that the early stage of growth involves the formation of discrete nuclei which coalesce, forming growth islands.…”

Section: Effect Of Substrate Surface Preparation--substratesupporting

confidence: 68%

Epitaxial Growth and Properties of GaAs on Magnesium Aluminate Spinel

Wang

Dougherty

Zanzucchi

et al. 1974

J. Electrochem. Soc.

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Heteroepitaxial normalGaAs films have been grown by the vapor phase organometallic process on magnesium aluminate spinel substrates prepared by various methods. The effects of variations in growth parameters on the epitaxial normalGaAs film characteristics have been studied. These growth parameters include substrate surface preparation, substrate composition, substrate orientation, growth temperature, gas flows, reactor geometry, and source materials. The substrate orientation and the purity of the source materials were found to play a critically important role in determining both the crystallinity and the electrical properties of the films. Unintentionally doped GaAs films with electron and hole mobilities up to 70 and 100%, respectively, of bulk normalGaAs values were grown in the carrier concentration range 1015–1016/cm3. The epitaxial composites have been characterized by physical and electrical methods. Information on the crystalline perfection, optical properties, and carrier transport characteristics has been obtained.

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“…In spite of extensive experiments on the deposition of the layer by this method (11)(12)(13)(14)(15), total impurity (ND-~-NA) seems to be higher than 1016/cm ~ so far.…”

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confidence: 89%

Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System

Seki

Tanno

Iida

et al. 1975

J. Electrochem. Soc.

106

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GaAs epitaxial layers with low electron concentrations were obtained from an alkylgallium and arsine system by use of triethylgallium. The highest Hall mobihty of the layer, with an electron concentration of 7.0 • 1013/cm8 at 77~ was 120,000 cmz/V sec. Carrier concentration and carrier type of the layer could be changed in the range of from 1012 to ,~ 1016/cm 3 by changing the arsine to triethyl gallium mole ratio introduced into a deposition zone. This fact was expected to be due to the amphoteric impurity sharing between the arsenic and the gallium sites of GaAs crystal.Although the extension of carrier concentration to the lower range resulted from impurity compensation, mobility data of the layers of electron concentrations higher than about 1014/cm 3 were almost the same as those from the usual AsCJ~-Ga-H2 system. Dominant acceptor impurities observed in the photolummescence measurements were discussed and were correlated with amphoteric silicon and carbon impurities. This was consistent with the result obtained on the ~npurities of the layer by mass spectroscopic analysis.One of the most commonly used techniques for growing high purity GaAs epitaxial layers from vapor phase is one using the AsC18-Ga-H2 system (1). Because of extensive efforts for growing high purity GaAs over the past several years (2-8), it is now possible to obtain GaAs with total ionized impurity concentration (ND -~-NA) in the 1013/cm s range (4). Although recent reports throw light on the preparation of high purity GaAs (5-8), the AsC13-Ga-H2 system is rather complicated and somewhat unstable (9).A system using alkylgallium and arsine, first reported by Manasevit (10), seems to have some advantage compared with the AsC18-Ga-H2 system. This system required only one temperature zone, whose temperature is easily controlled inductively by r.f. power. Crystal growth takes place on the substrate on a heated pedestal in a quartz tube with a cool wall. The system does not contain reactive halogen. This seems to be an important factor to suppress impurity incorporation into the layer from the reactor system.In spite of extensive experiments on the deposition of the layer by this method (11-15), total impurity (ND-~-NA) seems to be higher than 1016/cm ~ so far.Rai-Chaudhury (12) and Ito et aI. (15) detected a large quantity of impurities in the layer, such as silicon, carbon, and others by the mass spectroscopic analysis. Shallow active impurities of the layer were examined by the photoluminescence measurement and were expected to be carbon and/or silicon which mainly come from the trimethylgallium source (15). These reports seemed to show that a high purity gallium source, whose silicon and carbon impurities are reduced, should be used to obtain a high purity GaAs layer. Lindeke et al. (16) used distilled gallium diethyl chloride as gallium source, but the electron Hall mobility data at 77~ showed that impurity concentration was nearly the same as that from the trimethylgallium source.In this experiment, high purity triethylga]lium (TEG) was us...

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Heteroepitaxial GaAs on aluminum oxide. I: Early growth studies

Cited by 23 publications

References 4 publications

Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy

Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy

Epitaxial Growth and Properties of GaAs on Magnesium Aluminate Spinel

Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System

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