Heteroepitaxial
normalGaAs
films have been grown by the vapor phase organometallic process on magnesium aluminate spinel substrates prepared by various methods. The effects of variations in growth parameters on the epitaxial
normalGaAs
film characteristics have been studied. These growth parameters include substrate surface preparation, substrate composition, substrate orientation, growth temperature, gas flows, reactor geometry, and source materials. The substrate orientation and the purity of the source materials were found to play a critically important role in determining both the crystallinity and the electrical properties of the films. Unintentionally doped GaAs films with electron and hole mobilities up to 70 and 100%, respectively, of bulk
normalGaAs
values were grown in the carrier concentration range 1015–1016/cm3. The epitaxial composites have been characterized by physical and electrical methods. Information on the crystalline perfection, optical properties, and carrier transport characteristics has been obtained.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.