Heteroepitaxial Beta-Ga<sub>2</sub>O<sub>3</sub>on 4H-SiC for an FET With Reduced Self Heating

Russell, Stephen A. O.; Pérez‐Tomás, Amador; McConville, Christopher F; Fisher, C; Hamilton, Dean P.; Mawby, Philip; Jennings, Michael R.

doi:10.1109/jeds.2017.2706321

Cited by 59 publications

(35 citation statements)

References 24 publications

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“…SiO 2 , Al 2 O 3 , HfO 2 ) [63] , [64] , [65] in several semiconductor industries (i.e. silicon, SiC or GaN) [66] , [67] and insulating oxides are also ubiquitous as electronic substrates (sapphire, Ga 2 O 3 ) [68] , [69] , optoelectronic transparent substrates (soda-lime and borosilicate glasses, sapphire, YSZ) and optical lenses.…”

Section: Oxide Resistivitymentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO 2 emissions and the circular economy. Neuromorphic or synaptic electronics is an emerging field of research aiming to overcome the current computer's Von-Neumann bottleneck by building artificial neuronal systems to mimic the extremely energy efficient biological synapses. The introduction of photovoltaic and/or photonic aspects into these neuromorphic architectures will produce self-powered adaptive electronics but may also open up new possibilities in artificial neuroscience, artificial neural communications, sensing and machine learning which would enable, in turn, a new era for computational systems owing to the possibility of attaining high bandwidths with much reduced power consumption. This perspective is focused on recent progress in the implementation of functional oxide thinfilms into photovoltaic and neuromorphic applications towards the envisioned goal of selfpowered photovoltaic neuromorphic systems or a solar brain.

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Section: Oxide Resistivitymentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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“…Of note is the particularly poor thermal conductivity of gallium oxide. However, integration into devices, which provide heat sinks (such as silicon carbide) that limitation may be circumvented or, at least, moderated [61].…”

Section: Gallium Oxide the Newcomermentioning

confidence: 99%

“…Perhaps some of the most important limitations are; (1) the low value of the thermal conductivity and (2) the difficulty of having bipolar operation since p-type doping has not been available. To address the first issue, it is possible to thin the substrate to reduce the heat losses or to integrate gallium oxide epitaxies onto semiconductors with higher thermal conductivities such as SiC [61]. Regarding the second issue, we have recently demonstrated that majority background p-type conduction is present in nominally undoped β-Ga 2 O 3 thin films grown by Pulsed Laser Deposition [62] as shown below.…”

Section: Gallium Oxide the Newcomermentioning

confidence: 99%

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Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Pérez‐Tomás

Chikoidze

Jennings

et al. 2018

Oxide-Based Materials and Devices IX

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Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β-Ga 2 O 3 , which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

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“…Engineering the substrate of Ga 2 O 3 power devices is highly desired to assist in heat dissipation and address this SHE issue. Substrates such as sapphire [9], h-BN/sapphire [10], SiC [11], and diamond [12] have been proposed to help the heat dissipation in the Ga 2 O 3 power metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the κ value for sapphire is only 0.4 W/(cm•K), which is still low and could not satisfactorily solve the heat dissipation problem.…”

Section: Introductionmentioning

confidence: 99%

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

Lei

Han

et al. 2019

IEEE J. Electron Devices Soc.

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We propose and demonstrate Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on a high thermal conductivity AlN/Si substrate to improve the heat dissipation capability and keep their cost-effectiveness. Owing to the optimized source/drain contact and Al 2 O 3 /Ga 2 O 3 interface, a drain current of 580 mA/mm and peak intrinsic transconductance G m,int of 35.5 mS/mm were achieved, which are among the highest for all the reported top-gate Ga 2 O 3 MOSFETs. A peak mobility of 82.9 cm 2 /V•s, a high saturation velocity v sat of 1.1 × 10 7 cm/s, and a low interface trap density of 1.1 × 10 12 cm −2 eV −1 are also obtained. Pulse measurement reveals the good heat dissipation capability of the AlN/Si substrate. A three terminal off-state breakdown voltage V br of 118 V, a small specific on resistance R on,sp of 1.44 m •cm 2 , and power figure-of-merit of 9.7 MW/cm 2 are achieved in a device with L GD of 1.14 μm. These excellent results indicate the great potential of Ga 2 O 3 MOSFETs on AlN/Si substrate for future power electronics applications. INDEX TERMS Ga 2 O 3 , MOSFETs, AlN/Si, self-heating effect.

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Heteroepitaxial Beta-Ga₂O₃on 4H-SiC for an FET With Reduced Self Heating

Cited by 59 publications

References 24 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

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Heteroepitaxial Beta-Ga2O3on 4H-SiC for an FET With Reduced Self Heating

Cited by 59 publications

References 24 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

Contact Info

Product

Resources

About

Heteroepitaxial Beta-Ga₂O₃on 4H-SiC for an FET With Reduced Self Heating

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate