1991
DOI: 10.1016/0022-0248(91)90495-q
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Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE

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Cited by 4 publications
(2 citation statements)
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“…ZnSiAs 2 , a II-IV-V 2 chalcopyrite structure semiconductor, isoelectronic with GaAlAs 2 , has been prepared 7 and investigated as a candidate solar cell material. [8][9][10] Recent investigatons of the epitaxial growth of ZnSiAs 2 on GaAs (lattice mismatch 0.84%) by MOVPE 5 further confirms the possibility of this application. The lowest direct gap of 2.1-2.2 eV 11,12 and other strongly polarization dependent transitions in ZnSiAs 2 may also be useful in nonlinear optical applications.…”
Section: Introductionmentioning
confidence: 96%
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“…ZnSiAs 2 , a II-IV-V 2 chalcopyrite structure semiconductor, isoelectronic with GaAlAs 2 , has been prepared 7 and investigated as a candidate solar cell material. [8][9][10] Recent investigatons of the epitaxial growth of ZnSiAs 2 on GaAs (lattice mismatch 0.84%) by MOVPE 5 further confirms the possibility of this application. The lowest direct gap of 2.1-2.2 eV 11,12 and other strongly polarization dependent transitions in ZnSiAs 2 may also be useful in nonlinear optical applications.…”
Section: Introductionmentioning
confidence: 96%
“…The successful use of III-V semiconductors and their alloys for high efficiency solar cells has stimulated the study of isoelectronic ternary semiconductors. II-IV-V 2 materials are isoelectronic with III-V semiconductors, but contain more abundant elements (Zn, Cd, Si, Ge, Sn) than In or Ga, whose relative scarcity and high cost may preclude their use in large scale photovoltaic applications. ZnSiAs 2 , a II-IV-V 2 chalcopyrite structure semiconductor, isoelectronic with GaAlAs 2 , has been prepared and investigated as a candidate solar cell material. Recent investigatons of the epitaxial growth of ZnSiAs 2 on GaAs (lattice mismatch 0.84%) by MOVPE 5 further confirms the possibility of this application.…”
Section: Introductionmentioning
confidence: 99%