Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE

Achargui, N.; Benachenhou, Abdelhalim; Foucaran, A.; Bougnot, G.; Coulon, Pierre‐Eugène; Laurenti, J.P.; Camassel, Jean

doi:10.1016/0022-0248(91)90495-q

Cited by 4 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZnSiAs 2 , a II-IV-V 2 chalcopyrite structure semiconductor, isoelectronic with GaAlAs 2 , has been prepared 7 and investigated as a candidate solar cell material. [8][9][10] Recent investigatons of the epitaxial growth of ZnSiAs 2 on GaAs (lattice mismatch 0.84%) by MOVPE 5 further confirms the possibility of this application. The lowest direct gap of 2.1-2.2 eV 11,12 and other strongly polarization dependent transitions in ZnSiAs 2 may also be useful in nonlinear optical applications.…”

Section: Introductionmentioning

confidence: 96%

“…The successful use of III-V semiconductors and their alloys for high efficiency solar cells − has stimulated the study of isoelectronic ternary semiconductors. − II-IV-V 2 materials are isoelectronic with III-V semiconductors, but contain more abundant elements (Zn, Cd, Si, Ge, Sn) than In or Ga, whose relative scarcity and high cost may preclude their use in large scale photovoltaic applications. ZnSiAs 2 , a II-IV-V 2 chalcopyrite structure semiconductor, isoelectronic with GaAlAs 2 , has been prepared and investigated as a candidate solar cell material. − Recent investigatons of the epitaxial growth of ZnSiAs 2 on GaAs (lattice mismatch 0.84%) by MOVPE 5 further confirms the possibility of this application.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Preparation and Photoelectrochemical Characterization of ZnSiAs₂ Crystals

Wen¹,

Parkinson²

1997

J. Phys. Chem. B

View full text Add to dashboard Cite

ZnSiAs2 (chalcopyrite structure) single crystals were grown by chemical vapor transport (CVT). Hall effect and photoelectrochemical techniques were used to characterize the properties of the p-type materials. Doping level, mobility, and resistivity were determined and compared with literature values for crystals obtained from other growth techniques. Photocurrent spectroscopy was used to measure the bandgap and transition types in the crystals. The interfacial energetics were measured with capacitance techniques (Mott−Schottky). The effect of various wet chemical etchants on the photocurrent voltage curves and quantum yields for carrier collection was also investigated.

show abstract

Section: Introductionmentioning

confidence: 96%