1995
DOI: 10.1116/1.579491
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Helicon plasma source excited by a flat spiral coil

Abstract: We have characterized a new helicon plasma source with an end-launch antenna configuration. Power at 13.56 MHz is coupled via a four-turn flat spiral coil into an m=0 helicon mode with the application of a weak (B≳5 G) axial magnetic field. Plasma parameters were measured with Langmuir probes, and the structure and absorption of the helicon wave fields were determined with magnetic induction probes. Plasma densities of 1011–1012 cm−3 were produced in argon for pressures in the 1–100 mTorr range with a 5–60 G m… Show more

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Cited by 63 publications
(29 citation statements)
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“…[28][29][30] Finally, by using only the bottom coil, the helicon discharge is generated. 33,34 A similar helicon configuration is reported by Stevens et al 35 Time-varying magnetic fields are measured via a bare single induction loop ͑B-dot probe͒. 27 The probe is immersed into the plasma in the upstream and downstream plane for radial measurements.…”
Section: Methodsmentioning
confidence: 98%
“…[28][29][30] Finally, by using only the bottom coil, the helicon discharge is generated. 33,34 A similar helicon configuration is reported by Stevens et al 35 Time-varying magnetic fields are measured via a bare single induction loop ͑B-dot probe͒. 27 The probe is immersed into the plasma in the upstream and downstream plane for radial measurements.…”
Section: Methodsmentioning
confidence: 98%
“…The plasma generating wave is launched by the induced electric field of a flat coil antenna [7,8]. Details of the setup are described in [9], Langmuir-probe measurements of the plasma density and Bdot measurements of the wave field will be described in [10].…”
Section: Helicon Dischargementioning
confidence: 99%
“…The usual approach is to make use of 2.45 GHz with a resonant B field equal to 875 gauss. What is often ignored is that the resonant magnetic field corresponding to 13.56 MHz is approximately 4.7 gauss so RF sources, which employ weak magnetic fields, may still exhibit electron cyclotron resonance [32], [33]. Processing is a local process which depends directly on the plasma parameters immediately above the wafer and only indirectly on distant parameters.…”
Section: A Sourcesmentioning
confidence: 99%