Heavy ion transient characterization of a hardened-by-design active pixel sensor array

Marshall, C.J.; LaBel, Kenneth A.; Reed, Robert A.; Marshall, P.W.; Byers, W.; Conger, C.; Peden, Joseph C.; Eid, E.-S.; Jones, Morris; Gee, G.; Pickel, J.C.

doi:10.1109/redw.2002.1045552

Cited by 9 publications

(7 citation statements)

References 4 publications

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“…The shape and width of profiles is exactly the same. Moreover, the simulation agrees fairly well with the data, except in saturated pixels; showing that device variations around the photodiode have no significant effect on SET, contrary to results presented in [7]. It is interesting to note that despite the different capacitances of the standard and hardened diodes, all the experiments have the same profile.…”

Section: Design Variationssupporting

confidence: 82%

“…the point of view of detection, not really as a perturbation. In space applications domain, CIS have been qualitatively tested [5], but as far as we know, only few studies really got into details on APS [6], [7], [8]. The main conclusions are the presence of latch-up in digital parts of some circuits, and a need of a detailed study of charge collection with technology and design variations.…”

Section: Introductionmentioning

confidence: 99%

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Single-Event Effects in CMOS Image Sensors

Lalucaa

Goiffon

Magnan

et al. 2013

IEEE Trans. Nucl. Sci.

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In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 µm), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large-which shows the need for an improved model.

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Section: Design Variationssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Single-Event Effects in CMOS Image Sensors

Lalucaa

Goiffon

Magnan

et al. 2013

IEEE Trans. Nucl. Sci.

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“…The thin gate oxide ( 7.0 nm) contributed to the radiation hardness of all four of their pixel designs by assuring low threshold voltage shifts. The heavy-ion response of the Photobit APS imaging technology and the efficacy of hardening-by-design for transient ion effects was measured and modeled in 2002 [120], [121]. The transient ionization response was found to be very sensitive to photodetector design.…”

Section: B Aps Technologymentioning

confidence: 99%

Radiation effects on photonic imagers-a historical perspective

Pickel

Kalma

Hopkinson³

et al. 2003

IEEE Trans. Nucl. Sci.

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Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors. The paper provides a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.

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“…The heavy ion single event transient response of Photobit APS subarrays was very dependent on the specific pixel design. No latchup was observed up to an LET of 106 MeV/mg/cm2 (Xe at 60 o ) for a fluence >2x10 7 /cm 2[8].…”

mentioning

confidence: 91%