Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

“…The advantages of commercial NAND flash are particularly attractive for satellite applications where space and weight are critical. Many space programs have started to implement stateof-the-art NAND flash in flight applications [2]− [6]. However, the commercial die does not undergo any design or process change to enhance its hardness to the space environment.…”

“…The radiation effects community has investigated each generation of flash technology [2]− [20]. These investigations included testing for feasibility of specific flight missions [2]- [6], research done by academic institutions [7]− [11], and technology evaluations performed by NASA, ESA, and other aerospace industries [12]− [20]. Notably, the publications on this topic included an early paper in 1997 on a 16 Mbit NOR and a NAND flash [19].…”

Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories

“…2 were recorded in programmed FG cells (L1), whereas no errors were detected in erased cells (L0). The mechanisms behind this kind of errors have been studied in the past [11], [12]. A combination of photoemission, charge recombination, and positive charge trapping in the oxides surrounding the FG, determine the progressive shift in the threshold voltage ( ) of programmed FG cells.…”

“…A number of contributions have been presented over the last decade on the effects of ionizing radiation in flash memories [1], [4]- [11]. Concerning the susceptibility to total ionizing dose (TID), FG errors have been shown to occur already at few krad(Si) ( 20-30) in advanced SLC NAND flash devices (feature size 40 nm) [4], whereas in older generation SLC NAND cells (feature size 65 nm), errors showed up at higher doses, i.e.…”

Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam

“…Additionally, the stuck bits-due mainly to the leakage current-because of microdose and displacement damages on a bit cell also appear in synchronous dynamic random access memories (SDRAMs). The radiation sensitivity of SDRAMs has been reported in [2]- [9]. Furthermore, reports of micro-dose and displacement damages caused by single particles appearing in SDRAMs have been published [10]- [14].…”