Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

Petzold, Stefan; Sharath, Sankaramangalam Ulhas; Lemke, Jonas; Hildebrandt, Erwin; Trautmann, C.; Alff, Lambert

doi:10.1109/tns.2019.2908637

Cited by 37 publications

(19 citation statements)

References 26 publications

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“…Resistive random access memory (RRAM) devices based on binary metal oxides, for example, HfO x , TaO x , YO x , are promising candidates for next generation non‐volatile memory due to their potential for high‐density, high‐speed, ultimate scalability, resilience toward ionizing radiation and low‐power consumption . The proven complementary metal‐oxide‐semiconductor (CMOS) compatibility of hafnium and tantalum oxide has greatly increased the interest in these material candidates.…”

Section: Introductionmentioning

confidence: 99%

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold

Zintler

Eilhardt

et al. 2019

Adv Elect Materials

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A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11true1¯) is grown onto a c‐cut Al2O3‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (1¯1¯2¯) and (true1¯21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices.

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Section: Introductionmentioning

confidence: 99%

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold

Zintler

Eilhardt

et al. 2019

Adv Elect Materials

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“…From (4) and 7, the total current reads (11) which is nothing but a generalization of Mehonic's result [23] for the case of asymmetric potential drops at both sides of the constriction. In addition, comparing (1) and (11), we can identify the nonlinear term as (12) Notice that if we consider β = ½ and if we disregard the effects of the first tunneling sub-band (this is achieved using ε 0 → −∞ in (12)), we recover the celebrated Landauer formula [18] (see Figure 7b).…”

Section: Modeling Conductance Quantization Effectsmentioning

confidence: 89%

“…H is the Heaviside function. By integrating (3), we obtain (4) where N + is the number of sub-bands below the quasi-Fermi level at the cathode. C is an integration constant.…”

Section: Modeling Conductance Quantization Effectsmentioning

confidence: 99%

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Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Petzold

Piros

Eilhardt

et al. 2020

Adv Elect Materials

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Program under grant no. 805359-FOXON are gratefully acknowledged. E.M. also acknowledges the funding from the WAKeMeUP project as well as the support from the Ministerio de Ciencia, Innovación y Universidades, Spain (TEC2017-84321-C4-4-R and PCI2018-093107). Thanks to Katrin Walter for carrying out the UV/vis measurements and to Seyma Topcu for obtaining the current-voltage curves. S.P. and E.P. have equally contributed to the paper. Open access funding enabled and organized by Projekt DEAL.

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“…A number of fabrication methods for incorporation of a metal oxide RS layer in AlO x -based RRAM devices have been investigated. Methods based on solution processes for metal oxide thin films have been extensively considered, namely spin [32,33,34] and dip coating [35,36,37], drop casting [34,36,37,38] and different printing methods. Compared with traditional fabrication methods such as atomic-layer-deposition (ALD) [17,39,40] and magnetron sputtering [28,40,41], the solution-based method has advantages of low fabrication cost with the elimination of vacuum deposition processes [42], ease of preparation for precursor materials [39,43,44] and high efficiency of device throughput [27], which reveals the promising prospect of solution-based methods in RS layer fabrication.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Shen

Mitrović

et al. 2019

Micromachines

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Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>104), the narrowest resistance distribution, the longest retention time (>104 s) and the most endurance cycles (>150).

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Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

Cited by 37 publications

References 26 publications

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

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