Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM)

Katti, Romney R.; Guertin, S. M.; Yang-Scharlotta, Jean; Daniel, Andy G. S.; Some, Raphael

doi:10.1109/nsrec.2018.8584321

Cited by 10 publications

(8 citation statements)

References 5 publications

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“…Heavy-ion effects were on 256-Mbit commercial STT-MRAM arrays without supporting circuitry were studied by Honeywell, Plymouth, MN, USA [68]. These were observed to be free of permanent errors up to as high as 84 MeV • cm 2 /mg [68]. This was found to be an improvement over the field-switched toggle MRAM, which did exhibit some permanently shorted bits following strikes with LET >70 MeV • cm 2 /mg [85].…”

Section: A Stt Magnetic Memorymentioning

confidence: 99%

“…Due to the low power and high speed, there is interest in using STT-MRAM as an embedded cache memory [67]. STT-MRAM is relatively insensitive to radiation and hence is considered promising for future radiation-hard electronics [68].…”

Section: A Stt Magnetic Memorymentioning

confidence: 99%

Section: A Stt Magnetic Memorymentioning

confidence: 99%

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Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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Section: A Stt Magnetic Memorymentioning

confidence: 99%

Section: A Stt Magnetic Memorymentioning

confidence: 99%

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Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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“…Various researches have been performed to study the radiation effects on MTJ-based MRAMs. As yet, generally, results have indicated that MRAMs are quite robust against radiation effects [45]. Although the MRAM memory cells are insensitive to radiation, some works such as [6], [18] have demonstrated that the peripheral circuitry usually included in the chip to carry out I/O operations is susceptible to SELs and TID.…”

Section: ) Radiation Effects On Mramsmentioning

confidence: 99%

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

et al. 2022

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In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.

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“…For this reason, in the last few years, magnetic memory based on Spin Transfer-Torque (STT) switching mechanism gains the attention of the major semiconductor Companies. Comparative studies between Toggle-MRAM and STT-MRAM hybrid CMOS memory seem to suggest the latter to be more robust to heavy ion-induced hard error [7]. This could be explained by the smaller bit size and, more likely, by the different nano-pillar materials.…”

Section: Introductionmentioning

confidence: 99%

Heavy-Ion Irradiation Effects on Advanced Perpendicular Anisotropy Spin-Transfer Torque Magnetic Tunnel Junction

Coi

Pendina

Sousa

et al. 2021

IEEE Trans. Nucl. Sci.

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This paper investigates laser and heavy ion irradiation effects on Perpendicular Magnetic Anisotropy Spin Transfer Torque Magnetic Tunnel Junction devices (PMA STT-MTJ). The Radiative campaign will take place at the Université Catholique de Louvain (UCL) facility in April 2020. The considered devices consist of STT p-MTJs purely magnetic memories and they were fabricated using the most advanced CoFeB-MgO MTJ technology. Single-event upset (SEU) tolerance and modification of magnetic properties will be deeply investigated and presented in the final paper.

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Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM)

Cited by 10 publications

References 5 publications

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Heavy-Ion Irradiation Effects on Advanced Perpendicular Anisotropy Spin-Transfer Torque Magnetic Tunnel Junction

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