Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Tillack

2011

J. Nanosci. Nanotech.

Self Cite

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si(1-x)Gex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si(1-x)Gex(100) surface is achieved at temperatures below 500 degrees C. N atoms of about 4 x 10(14) cm(-2) are buried in the Si epitaxial layer within about 1 nm thick region. In the Si(0.5)Ge(0.5) epitaxial layer, N atoms of about 6 x 10(14) cm(-2) are confined within about 1.5 nm thick region. The confined N atoms in Si(1-x)Gex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(1-x)Gex(100) with P atomic amount of below about 4 x 10(14) cm(-2) using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si(1-x)Gex/Si heterointerface. These results open the way to atomically controlled technology for ULSIs.

Section: Nitrogen Atomic Layer Doping In Si and Si 1−x Ge X Epitaxialmentioning

confidence: 63%

Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth

Murota

Tillack

2011

J. Nanosci. Nanotech.

Self Cite

“…In the Si 0.5 Ge 0.5 epitaxial layer shown in Fig. 5, a N doping dose of 6x10 14 cm -2 is confined in an about 1.5 nm-thick region even after 650 o C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6x10 14 cm -2 which was found to be amorphous (14). Phosphorus Atomic-Layer Doping in Si Epitaxial Growth on Si 1-x Ge x /Si(100)…”

Section: Nitrogen Atomic Layer Doping In Si and Si 1-x Ge X Epitaxial...mentioning

confidence: 84%

Atomically Controlled Processing for Group IV Semiconductors

Murota

2009

ECS Trans.

“…In the Si 1-x5 Ge x epitaxial layer with high Ge fraction such as 0.5, a N doping dose of 6x10 14 cm -2 can be confined within an about 1.5 nm-thick region even after 650 o C heat treatment as shown in Fig. 3 (9), in contrast to the result for Si cap layer growth on the thermally nitrided Si(100). From XPS results shown in Fig.…”

Section: Introductionmentioning

confidence: 91%

Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors

Murota¹,

Tillack

2009

ECS Trans.

The concept of atomically controlled processing for group IV semiconductors is shown based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Si or Si1-xGex epitaxial growth on N, P or C atomic layer formed on Si(100) or Si1-xGex (100) surface, is achieved at temperatures below 500 oC. In the Si0.5Ge0.5 epitaxial layer, a N doping dose of 6x1014 cm-2 is confined within an about 1.5 nm thick region and the confined N atoms in Si1-xGex preferentially form Si-N bonds. In Si cap layer growth on the P atomic layer formed on Si1-xGex(100) with the P atom amount below about 4x1014 cm-2 using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within the 1 nm region around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si1-xGex/Si heterointerface.