1992
DOI: 10.1063/1.106645
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Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane

Abstract: Heavy Si doping was studied for low-pressure metalorganic chemical vapor deposition of GaAs by using tertiarybutylarsine (tBAs) as a group-V source and silane (SiH4) as a doping source gas. The Si doping efficiency was higher by one order of magnitude when tBAs was used instead of arsine (AsH3). The maximum electron concentration was 9.0×1018 cm−3, which is slightly higher than that obtained for AsH3 (5.9×1018 cm−3). The slight increase of the maximum concentration is considered to be due to a reduction of the… Show more

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Cited by 28 publications
(9 citation statements)
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“…Therefore, the explanation for the increased carrier concentration with higher temperatures appears not to be in this direction. In fact, the results presented in [Chichibu92] show a similar dependence of the electron concentration with growth temperature for experiments carried out with TBAs and AsH 3 , using SiH 4 as silicon precursor. Another hypothesis is that the chemical reactions involved in the decomposition of DTBSi in the presence of AsH 3 , include intermediate steps where SiH 4 is generated among other elements, which appears not to be the case with TBAs [Leu98].…”
Section: Heavily Si-doped Gaas Experimental Resultssupporting
confidence: 66%
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“…Therefore, the explanation for the increased carrier concentration with higher temperatures appears not to be in this direction. In fact, the results presented in [Chichibu92] show a similar dependence of the electron concentration with growth temperature for experiments carried out with TBAs and AsH 3 , using SiH 4 as silicon precursor. Another hypothesis is that the chemical reactions involved in the decomposition of DTBSi in the presence of AsH 3 , include intermediate steps where SiH 4 is generated among other elements, which appears not to be the case with TBAs [Leu98].…”
Section: Heavily Si-doped Gaas Experimental Resultssupporting
confidence: 66%
“…However, it has a critical problem consisting in the fact that the maximum electron concentration achievable is only around 1•10 19 cm -3 . As shown by SIMS measurements, the Si atoms continue to incorporate into the GaAs material for higher Si-precursor fluxes, but the electron concentration achieved does not increase but rather decreases [Chichibu92]. There exist several explanations for this behaviour.…”
Section: Heavily Si-doped Gaas Growthmentioning
confidence: 95%
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“…Tiene la ventaja de que difunde poco es GaAs pero, en cambio, tiene la limitación de que sólo se pueden obtener dopajes por debajo de 5•10 18 cm -3 , ya que a partir de ese nivel, el Si sigue incorporándose al cristal pero deja de ser activo suponiendo una disminución del dopado. Este efecto se ha corroborado mediante SIMS para muestras de GaAs dopada con Si utilizando diferentes precursores, entre ellos SiH 4 [Chichibu92] y Si 2 H 6…”
Section: Calibrado De Gaas Tipo N Dopado Con Siunclassified