Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition

Bauhuis, G.J.; Hageman, P.R.; Larsen, P.K.

doi:10.1016/s0022-0248(98)00136-5

Cited by 12 publications

(3 citation statements)

References 11 publications

(16 reference statements)

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“…Fig. 1 were in the range of 1 Â 10 À3 -4 Â 10 À3 cm À3 the material was saturated with Mg and hole carrier remained almost constant, for higher Cp2Mg flow rates the material became over saturated and hole concentration decreased [10]. The same tendency was also found in the hole concentration of Zn doped AlGaInP [11].…”

Section: Dependence Of Hole Concentration On the H 2 Flow Rate Througsupporting

confidence: 65%

“…However, the highest hole concentration of Zn-doped InGaAs base reported so far is 4 Â 10 19 cm À3 , and that was obtained at a lower temperature of 500 C [8]. Because Zn doping level increases with decreasing growth temperature [10], the hole concentration of about 6 Â 10 19 cm À3 at 550 C in our experiment is a promising result and it may be useful for making high performance HBTs.…”

Section: Introductionsupporting

confidence: 48%

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Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Lin

Jiang

Wei

et al. 2004

Journal of Crystal Growth

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Section: Dependence Of Hole Concentration On the H 2 Flow Rate Througsupporting

confidence: 65%

Section: Introductionsupporting

confidence: 48%

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Lin

Jiang

Wei

et al. 2004

Journal of Crystal Growth

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“…Therefore, it is of great importance to find a way to incorporate large concentrations of Zn in AlGaInP cladding layers without concern of Zn diffusion. Some efforts have already been made to understand the behaviour of Zn doping in the AlGaInP layer [7][8][9][10]. However, the effects of Zn diffusion (and the diffusion barrier) on the performance of AlGaInP-based red lasers have never yet been systematically studied.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

Shin

Kim

Kang

et al. 2005

Semicond. Sci. Technol.

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The behaviour of Zn diffusion in a GaInP/(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P layer from the Zn-doped (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P (Zn: 1.0-1.2 × 10 18 cm −3 ) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.

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