Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium telluride

Zha, M.; Bissoli, F.; Zappettini, A.; Zuccalli, G.; Zanotti, L.; Paorici, C.

doi:10.1016/s0022-0248(01)02316-8

Cited by 31 publications

(23 citation statements)

References 12 publications

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“…[9][10][11] both by Bridgman and PVT techniques. Hall effect measurements were performed using the Van der Pauw configuration.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, we obtained high purity semi-insulating CdTe by the use of a many steps process consisting in (i) synthesis by a high pressure technique [9], (ii) stoichiometry optimisation of the polycrystals [10], and (iii) growth by Bridgman and physical vapour transport (PVT) [11]. We also showed that, given a low background impurity content, the resistivity of the samples was mainly controlled by the stoichiometry [12].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Deep level characterization of undoped CdTe crystals

Gombia

Bissoli

Zha

et al. 2003

phys. stat. sol. (c)

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Cadmium telluride crystals have been prepared using innovative techniques for the synthesis and purification of the feed charge. The growth of low impurity content CdTe crystals was performed by both physical vapour transport and Bridgman techniques. It was found that the resistivity of the obtained crystals was strongly connected with their stoichiometry. The characterization of the main deep levels in semiconducting and semi-insulating materials, carried out by capacitance and current techniques, is reported.

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“…[9][10][11] both by Bridgman and PVT techniques. Hall effect measurements were performed using the Van der Pauw configuration.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Deep level characterization of undoped CdTe crystals

Gombia

Bissoli

Zha

et al. 2003

phys. stat. sol. (c)

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“…For applications where charge material purity is not a primary concern (such as for photovoltaic devices), an intermediate heat treatment of fragmented ingots can be considered for stoichiometry adjustment. 3 However, for applications calling for 6Nϩ or even 7N charge material, such as for high-performance radiation detectors, the reduction of ingots to small particles is undesirable because of contamination concerns.…”

Section: N Plus Thm Processmentioning

confidence: 99%

Traveling heater method preparation and composition analysis of CdTe ingots

Audet¹,

Guskov

Greenberg

2005

Journal of Elec Materi

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Large polycrystalline CdTe charges for the subsequent growth of CdTe and CdZnTe crystals were prepared by the traveling heater method (THM). The composition of the produced material was evaluated by vapor pressure scanning (VPS) analysis. Results from these analyses were instrumental in improving the THM CdTe compounding process. The optimization of THM process parameters, such as the compounding rate and the loading configuration of the synthesis crucible, led to the preparation of polycrystalline CdTe ingots with small deviation from stoichiometry. For five out of six analyzed samples, tellurium content between 50.0012 and 50.0043 at. pct was achieved, which is well below the tellurium saturation limit of the single-phase solid in equilibrium with the molten zone at the chosen THM process temperature.

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“…CdTe crystals were grown from the melt by Boron Oxide encapsulated Bridgman method [13]. The feed charge was obtained by high pressure synthesis from 7N pure Cd and Te [14] followed by a thermal treatment [15] in order to obtain the desired composition. The (111) oriented samples were cut from single large grains of the crystals and carefully polished.…”

Section: Introductionmentioning

confidence: 99%

Revealing of defects in CdTe crystals by DSL etching

Bissoli

Weyher

Zappettini³

et al. 2005

Cryst. Res. Technol.

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The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the crystals with the aim of improving the growth technology and better devices performance. In fact it is well known that extensive defects in CdTe crystals have a relevant role on the material properties and finally on the devices performance. DSL solution previously used on Si, GaAs and InP, here has been used for the first time on CdTe crystals. The etching solutions have been used to characterize crystals with two different characteristics: the first group shows high electrical resistivity and close to stoichiometry composition, the second one shows low resistivity behaviour and large Te deviation. We report here the preliminary results of the characterization of these crystals with the DSL etching.

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Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium telluride

Cited by 31 publications

References 12 publications

Deep level characterization of undoped CdTe crystals

Deep level characterization of undoped CdTe crystals

Traveling heater method preparation and composition analysis of CdTe ingots

Revealing of defects in CdTe crystals by DSL etching

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