2003
DOI: 10.1002/pssa.200303492
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Heat generation and dissipation in GaN-based light emitting devices

Abstract: InGaN laser diodes were been grown by metalorganic vapor phase depositions on sapphire substrates. These lasers were processed as gain guided structures and showed lasing in pulsed mode operation with duty cycles up to 2% at a wavelength of 401 nm. We determined the activation energy of the carriers in the active region by temperature dependent electroluminescence measurements during LED operation. By this means we estimated the temperature evolution inside the quantum wells by recording the transients of the … Show more

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Cited by 23 publications
(12 citation statements)
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“…Although the quantum efficiency is strongly dependent on the temperature and therefore the operation current, its decrease can not be attributed to the increasing operation current as the increase of the electrical load during the ageing experiment is below 0.5 W, which should result into a heating of the active region by less than 5 K [4]. This temperature increase is to low to have such a high impact on the quantum efficiency.…”
Section: Lifetime Measurementsmentioning
confidence: 90%
“…Although the quantum efficiency is strongly dependent on the temperature and therefore the operation current, its decrease can not be attributed to the increasing operation current as the increase of the electrical load during the ageing experiment is below 0.5 W, which should result into a heating of the active region by less than 5 K [4]. This temperature increase is to low to have such a high impact on the quantum efficiency.…”
Section: Lifetime Measurementsmentioning
confidence: 90%
“…This means that results of the simulation are close to situations of the ridge LDs. Details of the simulation can be found elsewhere [5]. Thermal resistance was slightly increasing because of smaller stripe width.…”
Section: Methodsmentioning
confidence: 99%
“…The most promising way to push magnetic data storage to 1 TBit/in 2 is through thermally assisted magnetic recording in Co-based nanostructures [135]. Due to a phonon bottleneck, it is difficult to increase the frequency range of GaN microwave devices beyond 100 GHz [136]. Ultralow thermal conductivity materials can be used for thermal barrier coatings in jet engines [137], whereas extremely high thermal conductivities can be used for heat sinking [138].…”
Section: Exploring the Limits Of Thermal Transport In Nanostructured mentioning
confidence: 99%