Homoepitaxial laser diodes emitting at 390 nm and the influence of substrate quality

Abstract

This paper deals with the homoepitaxial growth of laser diodes and the dependence on the substrate quality. We will present laser diodes emitting at 390 nm which are capable of cw-operation. Lifetime measurements have been conducted and the degradation of the diodes will be discussed.

Incorporation of QD ensembles in separate confinement heterostructures for long wavelength emission

“…Although, nowadays commercial available InGaN LDs are commonly produced on sapphire substrates, many groups investigate the growth on freestanding GaN substrates in polar [2,3] and nonpolar [4,5] orientation to reduce the threading dislocation density and thus increase the lifetime of the devices. Nevertheless, the performance of InGaN-based laser diodes and light emitting diodes (LEDs) can still be improved, as quantum well (QW) based LDs are suffering from high threshold current densities.…”