Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Rosenberg, Sahar; Sinder, M.

doi:10.1016/j.actamat.2011.03.052

Cited by 3 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3(b, c), exhibit step functions of the chemistry changes across the interfaces, illustrating that no intermixing of Ta and Si occurred between α-Ta lm and Si substrate. With respect to α-Ta lm grown at 500 o C, similar HAADF-STEM micrograph and EDS elemental of Si and Ta maps studies also show there is no evidence of Ta diffusing into the Si substrate, which is different from previous studies [13][14][15] . This result suggests the TiN x buffer layer are thermodynamically stable and compact, and therefore could prevent intermixing of Ta and Si between α-Ta lm and Si substrate under high substrate temperature.…”

Section: Resultscontrasting

confidence: 71%

“…The obtainment of pure α-Ta lm which is easily formed at high temperature deposited on Si substrate without inner-diffusion interface is very limited, partially because of the obstacle that Ta is highly reactive to the heating Si substrate [13][14][15] . Although it has been reported that the α-Ta lm are deposited on Si substrate at room temperature (RT) successfully by using several strategies such as optimizing the sputtering conditions and adding under layers [16][17][18][19][20][21][22][23][24][25][26][27] .…”

Section: Introductionmentioning

confidence: 99%

“…These lms are more likely to have small grain sizes and more surface defects [16][17][18][19][20] due to room temperature (RT) deposition, which could lead to additional surface microwave loss in the superconducting quantum device 8,12,28−32 . Besides, in these studies, the Ta-Si interface may include thicker non-superconducting underlayers 23,25 or metal silicides [13][14][15] which might form because of heating treatments used during the device fabrication ow. This would increase microwave loss channels at interfaces 12,29−32 .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-quality superconducting α-Ta film sputtered on heated silicon substrate

Wu¹,

Ding²,

Xiong

et al. 2023

Preprint

View full text Add to dashboard Cite

Intrigued by the discovery of the long lifetime in the α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with low-loss superconducting TiNx buffer layer. The pure-phase α-Ta film with a large growth temperature window has good crystalline character. The critical temperature (Tc) and residual resistance ration (RRR) in the α-Ta film grown at 500 oC are higher than that in the α-Ta film grown at room temperature. These results provide crucial experimental clues towards understanding the connection between the superconductivity and the materials' properties in the α-Ta film, and open a new route for producing high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computer.

show abstract

Section: Resultscontrasting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-quality superconducting α-Ta film sputtered on heated silicon substrate

Wu¹,

Ding²,

Xiong

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…The homogeneity of the field strength is hard to predict, as shape and electrical characteristics of both antenna and substrate have an influence on this para meter. In one earlier 27 MHz study, the substrate was completely enclosed by an antenna, which results in large differences in field strength between edge and centre of the substrate [23].…”

Section: Introductionmentioning

confidence: 99%

Reduction of Ag–Si electrical contact resistance by selective RF heating

Wijs

Ljevar

Sande

2016

J. Micromech. Microeng.

View full text Add to dashboard Cite

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s−1. Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates.

show abstract

High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Wu¹,

Ding²,

Xiong

et al. 2023

Sci Rep

View full text Add to dashboard Cite

Intrigued by the discovery of the long lifetime in the α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The α-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the α-Ta film grown at 500 °C are higher than that in the α-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the α-Ta film and open a new route for producing a high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computers.

show abstract

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Cited by 3 publications

References 10 publications

High-quality superconducting α-Ta film sputtered on heated silicon substrate

High-quality superconducting α-Ta film sputtered on heated silicon substrate

Reduction of Ag–Si electrical contact resistance by selective RF heating

High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Contact Info

Product

Resources

About