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Kim, E.-K.; Kwun, Sook‐Il; Lee, S.-M.; Seo, Hanbyul; Yoon, Jong‐Gul

doi:10.1103/physrevb.61.6036

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…This is consistent with the fact that the interface resistance dominates the total thermal resistance. The out-of-plane thermal conductivity of the present nanolaminates is as small as 0.35 W / m K, which is smaller than that of W-AlOx nanolaminates, 3 ZnS:SiO nanocomposite films commonly used in phase change recording media, 12 and ZrO and related films widely used as thermal barrier coatings for gas turbine blades. 13 Controlled oxidation or nitridation of thin metal films is a promising approach to pushing the limits of interface density in nanolaminatebased thermal barriers.…”

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confidence: 71%

“…The thermal resistance obtained here is indeed similar to that of interfaces found in AlOx-W nanolaminates 3 and ZnS-SiOx nanocomposites synthesized in an ultrahigh vacuum chamber. 12 Our data, however, should not be considered as direct evidence of the possible impact of interface defects or contamination layers. The thermal interface resistance values obtained for epitaxially grown TiN-MgO and TiN -Al 2 O 3 interfaces were similar, for example, even though the latter is expected to possess significant defects due to large lattice mismatch.…”

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confidence: 72%

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Nanoscale heat conduction across tunnel junctions

Hung

Carey

et al. 2005

Applied Physics Letters

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Nanoscale heat conduction across tunnel junctions prepared through natural oxidation of metal electrodes is experimentally studied. The thermal resistance of AlOx tunnel barriers increases linearly with barrier thickness, which is consistent with the prevailing theory of heat conduction in highly disordered materials. Heat conduction across tunnel junctions is strongly impeded by finite thermal resistance at interfaces between barrier and electrode layers, which can be exploited to create superior thermal barrier coatings. The thermal conductivity of nanolaminates consisting of a series of Ta∕TaOx tunnel junctions is determined to be well below the minimum thermal conductivity limit.

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confidence: 71%

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confidence: 72%

Nanoscale heat conduction across tunnel junctions

Hung

Carey

et al. 2005

Applied Physics Letters

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“…Moreover, the permittivity of the insulating sputtering targets affects the processing parameters during RF sputtering. 3) There have been many studies [4][5][6][7][8] that focus on dielectric ZnS-SiO 2 thin films. However, few studies emphasize the properties of the sputtering targets themselves.…”

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confidence: 99%

Effects of Zinc Oxide and Porosity on Permittivity of Sintered Zinc Sulfide–Silicon Dioxide

Chen¹,

Tang²,

Tang³

et al. 2008

jjap

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The dielectric constants of hot-pressed ZnO-containing 80 at. % ZnS–20 at. % SiO2 dielectric ceramics are analyzed at a frequency range varied from 1 MHz to 1 GHz. Their relative densities are controlled to range from 85 to 99% by varying the hot press pressures. A linear relationship is observed between dielectric permittivity and sintering density. The measured permittivity at 13.56 MHz frequency is found to range from 6.3 to 8.03, which is higher than the estimated values for composite materials using the Bruggeman and Lichtenecker equations. The large grain boundary area arising from nanosized grains contributes to the increase in permittivity. Additions of 0.5–5 wt % zinc oxide then increase the permittivity by forming nanosized Zn2SiO4 willemite phase on the surfaces of SiO2 particles. The presence of ZnO also stabilizes the high-temperature ZnS wurtzite phase to room temperature.

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“…Mixtures of zinc sulfide and silicon dioxide (ZnS-SiO 2 ) are used as a protective layer in phase-change discs; 15) this is largely because of their fine grain structure, which is thermally stable and has low thermal conductivity. 16,17) These mixtures can also be used as selectively etchable materials in thermal lithography, where they provide convex patterns with smooth edges. 10,[12][13][14] The pattern morphologies depend on the structure of the sample.…”

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Unique ZnS–SiO₂Morphologies Reflecting a Laser-Induced Heat Distribution

Mori

Itoh

2013

Jpn. J. Appl. Phys.

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Unique morphologies including a hemispherical dot and an inverse trapezoid line were fabricated from a mixture of zinc sulfide (ZnS) and silicon dioxide (SiO2) using thermal lithography. Depending on the laser power, three types of morphologies were formed for each of the dot and line patterns. The patterns were affected by the concentric heat transfer from the underlying light-absorption layer, and the transverse heat transfer caused by the spatial restriction. These unique morphologies are difficult to fabricate using photolithography, and they are therefore promising for new functional applications involving microscale structures.

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Heat conduction inZnS:SiO2composite films

Cited by 8 publications

References 18 publications

Nanoscale heat conduction across tunnel junctions

Nanoscale heat conduction across tunnel junctions

Effects of Zinc Oxide and Porosity on Permittivity of Sintered Zinc Sulfide–Silicon Dioxide

Unique ZnS–SiO₂Morphologies Reflecting a Laser-Induced Heat Distribution

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Heat conduction inZnS:SiO2composite films

Cited by 8 publications

References 18 publications

Nanoscale heat conduction across tunnel junctions

Nanoscale heat conduction across tunnel junctions

Effects of Zinc Oxide and Porosity on Permittivity of Sintered Zinc Sulfide–Silicon Dioxide

Unique ZnS–SiO2Morphologies Reflecting a Laser-Induced Heat Distribution

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Unique ZnS–SiO₂Morphologies Reflecting a Laser-Induced Heat Distribution