Hardware Implementation of GaN-HEMT Based ZVS DC–DC Converter Considering PCB Layout

Joo, Dong-Myoung; Kim, Hyunbin; Lee, Byoung-Kuk; Kim, Jong-Soo

doi:10.1007/s42835-018-00017-5

Cited by 4 publications

(1 citation statement)

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“…The high switching frequency and low gate-to-source threshold voltage (typically 1.5V) of the GaN device make the gate voltage of GaN HEMT extremely sensitive to "miller current", parasitic inductance, and noise. Hence the gate circuit design for high frequency remains an addressable issue in converter design with GaN [69]. There is a very small margin between the recommended and maximum VGS of GaN.…”

Section: B Challenges With the Gate-driver Designmentioning

confidence: 99%

Leveraging GaN for DC-DC Power Modules for Efficient EVs: A Review

Prajapati,

Balamurugan

2023

IEEE Access

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Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide high power-density, high efficiency and better thermal performance. GaN-based devices in electric vehicle power modules make the vehicle more efficient, achieving an extended range for the same battery size. Worldwide, researchers and engineers are working on GaN-based power-electronics modules. On the one hand, the utilisation of GaN switches in power modules eliminates a few existing design concerns. While it also introduces new challenges for designers. Mere replacing Si with GaN doesn't give the stipulated result. This article identifies the works related to GaN-based DC-DC converter modules to determine how researchers address the circuit design issues with GaN. This paper presents a detailed description of the material benefits of GaN and paves the path of future work by identifying the research gap in the field of GaN-based DC-DC converters.INDEX TERMS Electric vehicle, Gallium nitride (GaN), high-frequency DC-DC converter, isolated converter, non-isolated converter, Wide-band-gap devices

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Section: B Challenges With the Gate-driver Designmentioning

confidence: 99%