Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

Witczak, S.C.; Schrimpf, R.D.; Fleetwood, D.M.; Galloway, K.F.; Lacoe, R.C.; Mayer, D.C.; Puhl, James M.; Pease, R.L.; Suehle, John S.

doi:10.1109/23.658978

Cited by 119 publications

(39 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…And for the different devices fabricated by the different process, the amounts of the oxide trap charge and interface trap charge induced by radiation may different because of the amounts of the defects introduced in the oxide. The oxide trap charge can be eliminated by annealing at room temperature, but the interface trap charge cannot be significantly removed by annealing under the 100 o C, thus caused a different annealing performance of the two devices under the different dose rate [11], as shown in Figure 3-Figure6. …”

Section: Total Ionizing Effectsmentioning

confidence: 99%

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Liu¹,

Lü²,

Ma³

et al. 2016

Chinese Phys. C

View full text Add to dashboard Cite

Abstract:The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma irradiation source, respectively. The changes of the transistor parameter such as Gummel characteristics, excess base current before and after irradiation are examined. The results of the experiments show that for the KT1151, the radiation damage has been slightly different under the different dose rate after the prolonged annealing, shows a time dependent effect(TDE). But for the KT9041, the degradations of low dose rate irradiation is higher than the high dose rate, demonstrate that there have a potential enhanced low dose rate sensitive(ELDRS) effect exist on KT9041. The possible underlying physical mechanisms of the different dose rates response induced by the gamma ray are discussed.

show abstract

Section: Total Ionizing Effectsmentioning

confidence: 99%

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Liu¹,

Lü²,

Ma³

et al. 2016

Chinese Phys. C

View full text Add to dashboard Cite

show abstract

“…From the statistical results explained in et al Witczak [5], Current gain degradation grows worse with decreasing dose rate regardless of dose. Excess base current, an increase in base current due to radiation exposure, increases gradually with decreasing dose rate.…”

Section: Effect Of Radiationmentioning

confidence: 99%

“…From the analysis carried out by Witczak [5], the combined influence of both radiation and temperature has considerable dependence on gain degradation and excess base current enhancement. The combine effect of temperature and radiation results in degradation of performance parameters such as threshold voltage, pulse amplitude and time period of Constant Fraction Discriminator.…”

Section: Effect Of Radiationmentioning

confidence: 99%

“…In this stage, the radiation parameters are selected at the higher dosages as 0 KGray, 3.14 KGray, 6.64 KGray and 10 KGray. Similarly, the testing of IC was excited to higher temperatures of 30 0 C, 50 0 C, 70 0 C and 90 0 C. From the Witczak [5], the degradation of the device by radiation increases further with the temperature. Hence the items are subjected at first to the radiation step and second to the temperature step.…”

Section: Stage 2: Extensive Testingmentioning

confidence: 99%

“…This effect has been attributed to space charge effects from trapped holes and hydrogen related species through oxygen vacancies in base oxide. There are several hardness assurance tests and most popular has been high dose rate irradiation at elevated temperatures [5].…”

Section: Effect Of Radiationmentioning

confidence: 99%

See 2 more Smart Citations

Reliability prediction of constant fraction discriminator using modified PoF approach

Thaduri

Verma²,

Vinod

et al. 2013

2013 Proceedings Annual Reliability and Maintainability Symposium (RAMS)

View full text Add to dashboard Cite

The role of extended defects in device degradation

Pantelides

2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

Phone: þ1 615 343 4321, Fax: þ1 615 343 6589Grain boundaries and dislocations are well known to cause trouble in electronic devices, but in most cases they can be avoided by using single crystal films and eliminating or suppressing dislocation densities. Hetero-interfaces, on the other hand, are essential features of devices. This papers reviews several topics from the author's published work, combining theoretical calculations with experimental data (microscopy, electrical measurements) to illustrate the interplay of impurities with extended defects, especially interfaces: dopant segregation in grain boundaries of polycrystalline Si, the role of hydrogen in the degradation of the Si-SiO 2 interface in Si-based metal-oxidesemiconductor field-effect transistors (MOSFETs), the role of carbon, nitrogen, and hydrogen in the quality and degradation of the SiC-SiO 2 interface in SiC-based MOSFETs, and the role of vacancies in room-temperature degradation of III-V highmobility electron transistors by the formation of microvoids.

show abstract

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

Cited by 119 publications

References 45 publications

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Reliability prediction of constant fraction discriminator using modified PoF approach

The role of extended defects in device degradation

Contact Info

Product

Resources

About