Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Abstract

Abstract:The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma irradiation source, respectively. The changes of the transistor parameter such as Gummel characteristics, excess base current before and after irradiation are examined. The results of the experiments show that for the KT1151, the radiation damage has been slightly different under the different dose rate after the prolonged annealing, shows a time dependent effect(TDE). But for the KT9041, the degradations of low dose rate irradiation is higher than the high dose rate, demonstrate that there have a potential enhanced low dose rate sensitive(ELDRS) effect exist on KT9041. The possible underlying physical mechanisms of the different dose rates response induced by the gamma ray are discussed.

Total ionizing dose effects on graphene-based charge-trapping memory

“…As pointed by other literatures [3,4], radiation induced electrons can also be partly trapped in the surrounding oxides, leading to positive shifts of the flat band voltage. However, the influence of the electron-trapping was indistinguishable in this paper because the flat band voltage only shifted negatively under the irradiation, as shown in Figures 3(b) and (c).…”

“…However, with the fast development of the IC industry, the FG technology has encountered major challenges in scaling and reliability issues for its future developments [1][2][3]. One of the most important reliability concerns for electronic devices aiming at space exploration is their sensitivity to total ionizing dose (TID) and other radiation effects [4][5][6][7][8][9][10][11]. Owing to its storage mechanism, FG memory is naturally sensitive to ionizing radiation which generates electron-hole pairs, disturbs the charge stored in the floating gate, and sabotages the information retained in the device.…”

Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

“…More information about the device can be found in Refs. [17] and [18]. The TCAD model is calibrated with the parameters measured by using Keithley 4200 and the heavy-ion-induced SEE results.…”

An investigation of ionizing radiation damage in different SiGe processes

“…In our work, 60 Co γ-ray irradiation experiments were performed to investigate the ionizing radiation damage for SiGe HBTs manufactured by Huajie-tech. [7,8] These SiGe HBTs named by KT1151 and KT9041 are investigated under dose rates of 80 rad(SiO 2 )/s and 0.13 rad(SiO 2 )/s with a 60 Co γ-ray irradiation source. The results of the experiments show that the radiation damage is different after prolonged annealing.…”