Hardness and thermal stability of cubic silicon nitride

Jiang, J.Z.; Kragh, F.; Frost, Daniel J.; Ståhl, Kenny; Lindelov, H.

doi:10.1088/0953-8984/13/22/111

Cited by 143 publications

(95 citation statements)

References 17 publications

(14 reference statements)

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“…Later the same modification was synthesized by shock wave [2] and detonation [3] methods. The determined bulk modulus of c-Si 3 N 4 was about 300 GPa and the hardness exceeded 35 GPa [4] which is slightly higher than for SiO 2 -stishovite (about 33 GPa) [5] often referred to as the third hardest material after diamond and cubic boron nitride [4,5].…”

Section: Introductionmentioning

confidence: 82%

Porous silicon nitride under shock compression

Yakushev¹,

Уткин²,

Zhukov³

2012

AIP Conference Proceedings

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Abstract. The measurements of the Hugoniot and sound velocity pressure dependence in β-Si 3 N 4 porous samples under shock loading up to 55 GPa are presented. The Hugoniot and experimental particle velocity profiles demonstrate no peculiarities arising from the phase transition into high density c-Si 3 N 4 . Nevertheless, it follows from the comparison of measured Hugoniot with the Hugoniot for monolithic samples that phase transition does take place, starting at a much lower pressure of approximately 25 GPa, where the two Hugoniots intersect. The analysis of the positional relationship of the Hugoniots for monolithic and porous samples allowed us to confirm that the transformation pressure threshold decreases with the temperature increase due to a greater heating of porous material under loading. Measurements of sound velocity in shocked samples showed that sound velocity pressure dependence has a kink near 23 GPa, which is very close to the presumable pressure of the transition to c-Si 3 N 4 in porous samples.

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Section: Introductionmentioning

confidence: 82%

Porous silicon nitride under shock compression

Yakushev¹,

Уткин²,

Zhukov³

2012

AIP Conference Proceedings

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“…Thus, it appears that the phase transition is still second order in nature. Because this transition pressure (15 GPa) appears far from the pressure when WB 4 begins to yield (30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40), the structural change is not likely to be caused by plastic flow; but instead probably results from changes in optimal bonding under pressure within the elastic regime. In ReB 2 , however, a continuous increase of the c/a ratio was found in regardless of the compression conditions within the measured pressure range.…”

Section: Discussionmentioning

confidence: 99%

Lattice stress states of superhard tungsten tetraboride from radial x-ray diffraction under nonhydrostatic compression

et al. 2014

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In this work, we examine the lattice behavior of the economically interesting superhard material, tungsten tetraboride (WB 4 ), in a diamond anvil cell under non-hydrostatic compression up to 48.5 GPa. From the measurements of lattice-supported differential stress, significant strength anisotropy is observed in WB 4 . The (002) planes are found to support the highest differential stress of 19.7 GPa within the applied pressure range. This result is in contrast to ReB 2 , one of the hardest transition metal borides known to date, where the same planes support the least differential stress. A discontinuous change in the slope of c/a ratio is seen at 15 GPa, suggesting a structural phase transition that has also been observed under hydrostatic compression. Speculations on the possible relationship between the observed structural changes, the strength anisotropy, and the orientation of boron-boron bonds along the c direction within the WB 4 structure are included.

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“…Second, ␥-Si 3 N 4 is a semiconductor with an energy gap of about 3.5 eV 4 -7 and has potential applications in electronics. 8,9 Furthermore, both first-principles calculations and experiments indicate that ␥-Si 3 N 4 has a hardness comparable to the hardest known oxide ͑Stishovite, a high-pressure phase of SiO 2 ), 1,[10][11][12][13] and significantly greater than the hardness of the two well-known hexagonal polymorphs. 14 The ␥-Si 3 N 4 has also a very high resistance in air to oxidation ͑up to 1600 K͒.…”

Section: Introductionmentioning

confidence: 95%

Phonon spectrum and thermal properties of cubic Si3N4 from first-principles calculations

Fang¹,

Wijs

Hintzen³

2003

Journal of Applied Physics

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The phonon spectrum of cubic Si 3 N 4 was calculated by first-principles techniques. The results permit an assessment of important mechanical and thermo-dynamical properties such as the bulk modulus, lattice specific heat, vibration energy, thermal expansion coefficient, and thermal Grüneisen parameter for this compound. The calculated phonon spectrum shows a gapless spectrum extending to a cutoff energy of ϳ1030 cm Ϫ1 . The calculated Raman-and infrared-active phonon frequencies are compared with measured data in the literature.

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Hardness and thermal stability of cubic silicon nitride

Cited by 143 publications

References 17 publications

Porous silicon nitride under shock compression

Porous silicon nitride under shock compression

Lattice stress states of superhard tungsten tetraboride from radial x-ray diffraction under nonhydrostatic compression

Phonon spectrum and thermal properties of cubic Si3N4 from first-principles calculations

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