Hardening silicon-on-insulator nMOSFETs by multiple-step Si + implantation

Huang, Huixiang; Huang, YanYang; Zheng, Jiachun; Wei, Sufen; Tang, Kai; Bi, Dawei; Zhang, Zhengxuan

doi:10.1016/j.microrel.2015.12.015

Cited by 9 publications

(3 citation statements)

References 30 publications

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“…[124][125][126][127][128][129][130][131]. The interfacial defect densities modified by ion implantation have been studied combining IPE and ac conductance spectroscopy methods on nitrogen implanted SiC/SiO 2 interfaces [132].…”

Section: Photoinjectionmentioning

confidence: 99%

“…The experimental studies of the trapped charge in ion-implanted insulators are numerous with several examples represented in Refs. [124][125][126][127][128][129][130][131]. The interfacial defect densities modified by ion implantation have been studied combining IPE and ac conductance spectroscopy methods on nitrogen implanted SiC/SiO 2 interfaces [132].…”

Section: Photoinjectionmentioning

confidence: 99%

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Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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Section: Photoinjectionmentioning

confidence: 99%

Section: Photoinjectionmentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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“…15 As the most common technique used for SOI radiation hardening, the implantation of Si ions into BOX layer through top Si layer, however, can inevitably cause extensive crystal damage to the Si device layer which would degrade device performance and reliability significantly. 16,17 An improvement in the quality of the radiation hardened SOI is highly desirable to retain function and guarantee operation stability. Our recent research shows that the ion-cut technique presents much potential in the fabrication of radiation hardened SOI wafers with the ability to implement BOX modification prior to wafer bonding.…”

mentioning

confidence: 99%

Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique

Chang¹,

Yu²,

Wei³

et al. 2018

ECS J. Solid State Sci. Technol.

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An innovative process is proposed to fabricate radiation hardened silicon-on-insulator (SOI) wafers by combining the Si + implantation modification with ion-cut technique. The obtained SOI materials present superior quality in film thickness, uniformity and defect density, while the Si nanocrystals formed by Si + implantation are evidenced. The radiation response of pseudo-MOS transistors demonstrates that the hardening process can significantly improve the total ionizing dose (TID) radiation tolerance of SOI wafers by creating Si nanocrystals to reduce the accumulation of radiation-induced positive trapped charges in oxides. The electrical parameters such as electron/hole mobility (μ e /μ h ) and Si film/BOX interface traps density (D it ) are extracted from the pseudo-MOS technique and illustrate the efficiency and stability under different implantation condition. Finally, the proposed radiation hardening process may provide a practical and reliable strategy to reinforce the TID tolerance of SOI wafers, thus expediting the development of SOI-based devices and circuits for space applications.

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Advanced monopole antenna with a wide beamwidth for the assessment of outdoor 5G wireless communication environments

Nam

Lee

Kim

2018

Micro & Optical Tech Letters

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We propose an advanced monopole antenna to investigate non‐stationary outdoor wireless channel environments of 5G mobile communications. Our antenna has an omni‐directional beam pattern in the azimuth plane and a wide half‐power beamwidth (HPBW) in the elevation plane, respectively. To minimize blind angles along the axis of the monopole, we intentionally add a metallic annular ring around the monopole, which operates as a secondary source of our antenna. Then, the circumferential field from the secondary source appropriately interferes with the primary field from the monopole to widen the HPBW with a relatively high antenna gain in a far‐field region. An input signal is applied to a standard WR‐28 waveguide, and it is transferred to the monopole antenna through a coaxial waveguide. However, because impedance looking into the monopole and the waveguides are all different, we insert a mode converter between the rectangular and the coaxial waveguides. For better impedance matching, the coaxial waveguide is also used as an impedance transformer between the mode converter and the monopole antenna. Consequently, we can obtain the required omni‐directional radiation pattern with a wide HPBW and a high gain. All measurement data show good agreement with simulations, which proves the validity of our approach.

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Hardening silicon-on-insulator nMOSFETs by multiple-step Si + implantation

Cited by 9 publications

References 30 publications

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique

Advanced monopole antenna with a wide beamwidth for the assessment of outdoor 5G wireless communication environments

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