Hardening Effect of GaP1-xNxand GaAs1-xNxAlloys by Adding Nitrogen Atoms

Momose, Kenji; Yonezu, Hiroo; Fujimoto, Yasuhiro; Ojima, Kaoru; Furukawa, Yukio; Utsumi, Atsushi; Aiki, K.

doi:10.1143/jjap.41.7301

Cited by 34 publications

(20 citation statements)

References 5 publications

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“…The crystalline quality and the nitrogen composition were evaluated by high-resolution X-ray diffraction (XRD) measurement with (004) symmetrical and (115) asymmetrical diffractions [7].…”

Section: Introductionmentioning

confidence: 99%

Increase in luminescence efficiency of GaPN layers by thermal annealing

Utsumi

Yonezu

Furukawa

et al. 2003

phys. stat. sol. (c)

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The effect of rapid thermal annealing (RTA) on the luminescence properties of GaPN layers was investigated. GaPN layers were grown on GaP and Si substrates. The luminescence properties were evaluated by cathodeluminescence and low-temperature photoluminescence. It was found that the luminescence intensity was increased and the peak photon energy was shifted to the high-energy side in all samples after RTA. The luminescence intensity of the GaPN layers was increased with increasing the annealing temperature. It was also found that high-temperature RTA can be applied to the GaPN layer grown on the Si substrate with a thin Si cap layer rather than the GaPN layer on the GaP substrate. It was estimated that high-temperature RTA reduces the spatial fluctuation of nitrogen compositions and the density of defects attributed to nitrogen atoms. . Thus, GaPN has attracted much attention as a novel material, because GaPN with the nitrogen composition of about 2% is latticematched to Si. Moreover, relatively strong photoluminescence (PL) and electroluminescence have been observed [2,3]. We have realized a dislocation-free GaPN layer, which was lattice-matched to Si, grown on Si substrates with a thin GaP buffer layer [4,5]. Additionally, the PL was observed at room temperature (RT). However, the PL intensity was decreased with increasing the nitrogen composition as reported in previous papers [2,6]. The decrease in the PL intensity implies that the GaPN layer contains a large number of nonradiative recombination centers and/or deep-levels. These defects could be generated due to a large miscibility gap and fluctuations of nitrogen compositions in the GaPN layer. It is needed to improve the crystalline quality of GaPN layer.Thus, we have investigated the effect of rapid thermal annealing (RTA) on the luminescence properties of the GaPN layer grown on a GaP substrate (GaPN/GaP) and a Si substrate (GaPN/Si), respectively.

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“…The crystalline quality and the nitrogen composition were evaluated by high-resolution X-ray diffraction (XRD) measurement with (004) symmetrical and (115) asymmetrical diffractions [7].…”

Section: Introductionmentioning

confidence: 99%

Increase in luminescence efficiency of GaPN layers by thermal annealing

Utsumi

Yonezu

Furukawa

et al. 2003

phys. stat. sol. (c)

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show abstract

“…The critical thickness of 2.3% and 3.8%-N films calculated using the Matthews and Blakeslee model [4] is 34 and 18 nm, respectively. The layer thickness of two films are beyond the calculated values, however, the strain factor is still 1, which may be contributed by other mechanisms such as the pinning effect of the dislocation at the impurities as carbon [5] and the hardening effect [6], or in XRD measurement the signal from the strained parts in the GaPN layer will be stronger than the relaxed parts, and as a result the layer may seem to be completely strained from the XRD results. Fig.…”

Section: Article In Pressmentioning

confidence: 72%

MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)

Nakajima

Ono

Kuboya

et al. 2007

Journal of Crystal Growth

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“…The experimental critical thickness of the GaPN epitaxial layer grown on Si and GaP substrates was larger than the theoretical critical thickness. This effect is caused by the dislocation pinning effect by N atoms [29]. From this tendency, for example, the critical thickness of a GaP 0.99 N 0.01 layer on the Si substrate is estimated to be 300 nm at least.…”

Section: Resultsmentioning

confidence: 99%