An In x Ga 1Àx P 1Ày N y /GaP 0:982 N 0:018 double-heterostructure (DH) light-emitting diode (LED) was fabricated on a Si substrate using solid-source molecular beam epitaxy (SS-MBE) with an rf plasma nitrogen source. It was confirmed by high resolution X-ray diffraction (XRD) analysis that the structure of the LED had a small lattice mismatch to the Si substrate. A crosssectional image obtained by transmission electron microscopy (TEM) revealed that there were no threading dislocations in the epitaxial layers. The electroluminescence (EL) properties were also evaluated. The EL peak wavelength of an In x Ga 1Àx P 1Ày N y /GaP 0:982 N 0:018 DH LED was 665 nm at room temperature when the indium (x) and nitrogen contents (y) were 4.0% and 3.8%, respectively. A relatively wide EL spectrum was obtained. These specific features of EL spectra could be attributed to a long band tail formed by nitrogen in the In x Ga 1Àx P 1Ày N y active layer.

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The effect of indium on photoluminescence properties of InGaPN layers was investigated and compared with that of GaPN layers. Two phenomena involving photoluminescence properties were observed in the InGaPN layers: (i) an S-shape of photoluminescence (PL) peak energy as a function of temperature, caused by spatial fluctuation of bandgap energy related to In and N content; and (ii) red shifts of the PL peak energy at 18 K in the InGaPN layers after rapid thermal annealing (RTA), caused by the increase of N- and In-rich region with increasing RTA temperature. It was also found that integrated PL intensity in the InGaPN layers was higher than that in the GaPN layers, and that PL quenching became more insensitive to the change in temperature resulting from the decrease in nonradiative centers with increasing RTA temperature.